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PCF85116-3T/01

Description
2048 x 8-bit cmos eeprom with i2c-bus interface
Categorystorage    storage   
File Size158KB,21 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PCF85116-3T/01 Overview

2048 x 8-bit cmos eeprom with i2c-bus interface

PCF85116-3T/01 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instruction3.90 MM, PLASTIC, SOT-96-1, SO-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum20
Durability1000000 Write/Erase Cycles
I2C control byte1010MMMR
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
memory density16384 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count2048 words
character code2000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
power supply3/5 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current0.000006 A
Maximum slew rate0.001 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm
Maximum write cycle time (tWC)10 ms
write protectHARDWARE
Base Number Matches1
PCF85116-3
2048
×
8-bit CMOS EEPROM with I
2
C-bus interface
Rev. 04 — 25 October 2004
Product data
1. Description
The PCF85116-3 is an 16 kbits (2048
×
8-bit) floating gate Electrically Erasable
Programmable Read Only Memory (EEPROM). By using redundant EEPROM cells it
is fault tolerant to single bit errors. In most cases multi bit errors are also covered.
This feature dramatically increases reliability compared to conventional EEPROM
memories. Power consumption is low due to the full CMOS technology used. The
programming voltage is generated on-chip, using a voltage multiplier.
As data bytes are received and transmitted via the serial I
2
C-bus, a package using
eight pins is sufficient. Only one PCF85116-3 device is required to support all eight
blocks of 256
×
8-bit each.
Timing of the E/W cycle is carried out internally, thus no external components are
required. A write-protection input at pin 7 (WP) allows disabling of write-commands
from the master by a hardware signal. When pin 7 is HIGH, data in the EEPROM are
protected. The data bytes received will not be acknowledged by the PCF85116-3 and
the EEPROM contents are not changed.
Remark:
The PCF85116-3 is pin and address compatible to the PCx85xxC-2 family.
The PCF85116-3 covers the whole address space of 16 kbits; address inputs are no
longer needed. Therefore, pins 1 to 3 are not connected. The write-protection input
(WP) is on pin 7.
2. Features
s
Low power CMOS:
x
maximum operating current 1.0 mA
x
maximum standby current 10
µA
(at 5.5 V), typical 4
µA
s
Non-volatile storage of 16 kbits organized as eight blocks of 256
×
8-bit each
s
Single supply with full operation down to 2.7 V
s
On-chip voltage multiplier
s
Serial input/output I
2
C-bus (100 kbit/s standard-mode and 400 kbit/s fast-mode)
s
Write operations: multi byte write mode up to 32 bytes
s
Write-protection input
s
Read operations:
x
sequential read
x
random read
s
Internal timer for writing (no external components)
s
Power-on reset
s
High reliability by using redundant EEPROM cells

PCF85116-3T/01 Related Products

PCF85116-3T/01 PCF85116-3P/01
Description 2048 x 8-bit cmos eeprom with i2c-bus interface 2048 x 8-bit cmos eeprom with i2c-bus interface
Is it Rohs certified? conform to conform to
Parts packaging code SOIC DIP
package instruction 3.90 MM, PLASTIC, SOT-96-1, SO-8 0.300 INCH, PLASTIC, SOT-97-1, DIP-8
Contacts 8 8
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum clock frequency (fCLK) 0.4 MHz 0.4 MHz
Data retention time - minimum 20 20
Durability 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
I2C control byte 1010MMMR 1010MMMR
JESD-30 code R-PDSO-G8 R-PDIP-T8
JESD-609 code e4 e4
length 4.9 mm 9.5 mm
memory density 16384 bi 16384 bi
Memory IC Type EEPROM EEPROM
memory width 8 8
Number of functions 1 1
Number of terminals 8 8
word count 2048 words 2048 words
character code 2000 2000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 2KX8 2KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP DIP
Encapsulate equivalent code SOP8,.25 DIP8,.3
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Parallel/Serial SERIAL SERIAL
power supply 3/5 V 3/5 V
Certification status Not Qualified Not Qualified
Maximum seat height 1.75 mm 4.2 mm
Serial bus type I2C I2C
Maximum standby current 0.000006 A 0.000006 A
Maximum slew rate 0.001 mA 0.001 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V
surface mount YES NO
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form GULL WING THROUGH-HOLE
Terminal pitch 1.27 mm 2.54 mm
Terminal location DUAL DUAL
width 3.9 mm 7.62 mm
Maximum write cycle time (tWC) 10 ms 10 ms
write protect HARDWARE HARDWARE
Base Number Matches 1 1

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