2SK4026 datasheet, PDF - EEWORLD Datasheet

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2SK4026: Descriptionswitching regulator applications; CategoryDiscrete semiconductor The transistor; File Size205KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK4026 Overview

switching regulator applications

2SK4026 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	56 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	1 A
Maximum drain-source on-resistance	9 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK4026

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V)

2SK4026

Switching Regulator Applications

６．５±０．２

５．２±０．２

１．５±０．２

Unit: mm

０．６ MAX．

Features

•

Low drain-source ON-resistance: R

DS (ON)

= 6.4

Ω(typ.)

High forward transfer admittance: |Y

| = 0.85 S (typ.)

Low leakage current: I

DSS

= 100

μA

(max) (V

DSS

= 600 V)

Enhancement mode: V

= 2.0 to 4.0 V (V

= 10 V, I

= 1 mA)

０．９

１．６

５．５±０．２

１．１±０．２

４．１±０．２

５．７

０．６ MAX

２．３

２．３±０．２

０．６±０．１５

Absolute Maximum Ratings

(Ta

25°C)

１

２

３

Characteristic

Drain-source voltage

Drain-gate voltage (R

20 kΩ)

Gate-source voltage

Drain current

Pulse

(Note 1)

Symbol

DSS

DGR

GSS

stg

Rating

600

±30

150

−55

to 150

Unit

°C

０．８ MAX．

１．1 MAX．

JEDEC

JEITA

TOSHIBA

―

2-7J2B

Drain power dissipation (Tc

25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Weight: 0.36 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Symbol

th (ch-c)

th (ch-a)

Max

6.25

125

Unit

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

90 V, T

25°C, L

100 mH, I

1 A, R

Note 3: Repetitive rating; pulse width limited by max channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-08

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