2SJ534
Silicon P Channel MOS FET
REJ03G0884-0500
(Previous: ADE-208-589C)
Rev.5.00
Sep 07, 2005
Description
High speed power switching
Features
•
Low on-resistance
R
DS (on)
= 0.050
Ω
typ.
•
Low drive current.
•
4 V gate drive devices.
•
High speed switching.
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1 2
3
S
Rev.5.00 Sep 07, 2005 page 1 of 7
2SJ534
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
–60
±20
–18
–72
–18
–18
27
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
I
AP
Note 3
E
AR
Pch
Tch
Note 2
Note 3
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
4. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–60
±20
—
—
–1.0
—
—
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.050
0.070
16
1300
650
180
14
95
190
135
–1.0
70
Max
—
—
–10
±10
–2.0
0.065
0.110
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±16
V, V
DS
= 0
I
D
= –1 mA, V
DS
= –10 V
Note 4
I
D
= –9 A, V
GS
= –10 V
I
D
= –9 A, V
GS
= –4 V
Note 4
I
D
= –9 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –10 V
I
D
= –9 A
R
L
= 3.33
Ω
I
F
= –18 A, V
GS
= 0
I
F
= –18 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 4
Rev.5.00 Sep 07, 2005 page 2 of 7
2SJ534
Main Characteristics
Power vs. Temperature Derating
40
1000
300
Maximum Safe Operation Area
Pch (W)
I
D
(A)
30
100
30
10
3
1
0.3
10
µs
0
= 1
1 m
µ
s
0m
s
DC
s(
Op
1s
era
ho
tio
t)
n(
Tc
Operation in
=2
5°
this area is
C)
limited by R
DS (on)
Channel Dissipation
PW
10
20
10
Drain Current
Ta = 25°C
0
0
50
100
150
200
0.1
0.1
0.3
1
3
10
30
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
–20
–10 V
–6 V
–4 V
–3.5 V
Pulse Test
–20
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
–16
–3 V
I
D
(A)
Drain Current
–16
–12
–12
Drain Current
–8
–2.5 V
–4
V
GS
= –2 V
0
0
–2
–4
–6
–8
–10
–8
–4
Tc = 75°C
25°C
–25°C
0
0
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–3.0
Pulse Test
–2.5
–2.0
–1.5
–1.0
–0.5
0
0
–4
–8
–12
–16
–20
I
D
= –20 A
–10 A
–5 A
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
1
Pulse Test
0.5
0.2
0.1
0.05
–10 V
0.02
0.01
–1
V
GS
= –4 V
–2
–5
–10
–20
–50 –100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.5.00 Sep 07, 2005 page 3 of 7
2SJ534
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.30
Pulse Test
0.25
0.20
–5 A, –10 A
0.15
0.10
0.05
–10 V
0
–40
0
40
V
GS
= –4 V
I
D
= –20 A
100
30
Tc = –25°C
10
3
75°C
1
0.3
0.1
–0.1
25°C
Forward Transfer Admittance vs.
Drain Current
–5 A, –10 A, –20 A
80
120
160
V
DS
= –10 V
Pulse Test
–0.3
–1
–3
–10
–30
–100
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
Ciss
1000
300
100
Crss
30
10
V
GS
= 0
f = 1 MHz
0
–10
–20
–30
–40
–50
Coss
Body-Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
50
20
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
10
–0.1 –0.2
–0.5 –1
–2
–5 –10 –20
Reverse Drain Current
I
DR
(A)
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
0
V
DD
= –10 V
–25 V
–50 V
0
1000
500
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
PW = 5
µs,
duty
≤
1 %
td(off)
200
tf
100
50
tr
20
10
–0.1 –0.2
td(on)
–0.5 –1
–2
–5 –10 –20
–20
–4
Drain to Source Voltage
–40
V
DS
–60
V
DD
= –50 V
–25 V
–10 V
I
D
= –18 A
0
16
32
V
GS
–8
–12
–80
–16
–100
48
64
–20
80
Gate to Source Voltage
Switching Time t (ns)
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.5.00 Sep 07, 2005 page 4 of 7
2SJ534
Reverse Drain Current vs.
Source to Drain Voltage
–20
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= –18 A
V
DD
= –25 V
duty < 0.1 %
Rg
≥
50
Ω
Reverse Drain Current I
DR
(A)
–16
–10 V
40
–12
–5 V
30
–8
V
GS
= 0, 5 V
20
–4
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
10
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 4.17°C/W, Tc = 25°C
P
DM
D=
PW
T
1m
10 m
100 m
1
10
PW
T
0.03
0.02
1
0.0
1s
h
p
ot
u ls
e
0.01
10
µ
100
µ
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
• L • I
AP2
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
I
D
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.U.T
Vin
–15 V
50
Ω
V
DD
0
Rev.5.00 Sep 07, 2005 page 5 of 7
京公网安备 11010802033920号
EEWORLD
