015AZ3.3-X datasheet, PDF - EEWORLD Datasheet

015AZ3.3-X: Descriptiondiode silicon epitaxial planar type; CategoryDiscrete semiconductor diode; File Size233KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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015AZ3.3-X Overview

diode silicon epitaxial planar type

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	R-PDSO-F2
Contacts	2
Manufacturer packaging code	1-1G1A
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	130 Ω
JESD-30 code	R-PDSO-F2
Maximum knee impedance	1000 Ω
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.15 W
Certification status	Not Qualified
Nominal reference voltage	3.23 V
Maximum reverse current	20 µA
surface mount	YES
technology	ZENER
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	2.5%
Working test current	5 mA
Base Number Matches	1

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