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BYV27-600

Description
ultra fast low-loss controlled avalanche rectifiers
CategoryDiscrete semiconductor    diode   
File Size111KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BYV27-600 Overview

ultra fast low-loss controlled avalanche rectifiers

BYV27-600 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionE-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeE-LALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1.1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.05 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24

BYV27-600 Related Products

BYV27-600 BYV27-200 BYV27-300 BYV27-400 BYV27-50 BYV27-500 BYV27-100 BYV27-150
Description ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers ultra fast low-loss controlled avalanche rectifiers
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction E-LALF-W2 E-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 E-LALF-W2
Contacts 2 2 2 2 2 2 2 2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1.07 V 0.82 V 0.82 V 1.07 V 1 V 1.07 V 1.07 V
JESD-30 code E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
Humidity sensitivity level 1 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 40 A 50 A 50 A 50 A 50 A 40 A 50 A 50 A
Number of components 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1.1 A 1.3 A 1.25 A 1.25 A 1.3 A 1.1 A 1.3 A 1.3 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225 225 225
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 200 V 300 V 400 V 50 V 500 V 100 V 150 V
Maximum reverse recovery time 0.05 µs 0.025 µs 0.05 µs 0.05 µs 0.025 µs 0.05 µs 0.025 µs 0.025 µs
surface mount NO NO NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker NXP - NXP NXP NXP NXP NXP NXP
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