HRW0202B
Silicon Schottky Barrier Diode for Rectifying
REJ03G0153-0200Z
(Previous: ADE-208-345A)
Rev.2.00
Dec.15.2003
Features
•
Low forward voltage drop and suitable for high efficiency rectifying.
•
MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HRW0202B
Laser Mark
S18
Package Code
MPAK
Pin Arrangement
3
2
1
(Top View)
1. Anode
2. Anode
3. Cathode
Rev.2.00, Dec.15.2003, page 1 of 5
HRW0202B
Absolute Maximum Ratings
*1
(Ta = 25°C)
Item
Repetitive peak reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. Two device total
2. See from Fig.4 to Fig.7
3. 10ms sine wave 1 pulse
Symbol
V
RMM
*
I
O
*
Tj
Tstg
2
2
Value
20
200
3
125
–55 to +125
Unit
V
mA
A
°C
°C
I
FSM
*
3
Electrical Characteristics
*1
(Ta = 25°C)
Item
Forward voltage
Reverse current
Thermal resistance
Symbol
V
F
I
R
R
th(j-a)
Min
—
—
—
Typ
—
—
400
Max
0.42
10
—
Unit
V
µA
Test Condition
I
F
= 100 mA
V
R
= 20 V
*2
°C/W
Polyimide board
Notes: 1. Per one device
2. Polyimide board
20h×15w×0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
Rev.2.00, Dec.15.2003, page 2 of 5
HRW0202B
Main Characteristic
1.0
Pulse test
10
–1
Ta = 75°C
Reverse current I
R
(A)
Forward current I
F
(A)
10
–3
Pulse test
10
–4
Ta = 75°C
10
–2
10
–5
10
–3
Ta = 25°C
10
–4
10
–6
Ta = 25°C
10
–5
10
–7
10
–6
0
0.1
0.2
0.3
0.4
0.5
0.6
10
–8
0
5
10
15
20
25
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
100
f = 1MHz
Pulse test
Capacitance C (pF)
10
1.0
1.0
10
Reverse voltage V
R
(V)
40
Fig3. Capacitance vs. Reverse voltage
Rev.2.00, Dec.15.2003, page 3 of 5
HRW0202B
0.06
0A
t
T
Tj = 25°C
t
D=—
T
D=1/6
sin(θ=180°)
D=1/3
D=1/2
DC
0.08
Forward power dissipation Pd (W)
Reverse power dissipation Pd (W)
0V
t
T
t
D=—
T
D=5/6
0.05
0.04
Tj = 125°C
0.03
0.06
D=2/3
D=1/2
0.04
sin(θ=180°)
0.02
0.01
0
0.02
0
0
0.02
0.04
0.06
0.08
0.10
0
5
10
15
20
25
Forward current I
F
(A)
Fig.4 Forward power dissipation vs. Forward current
Reverse voltage V
R
(V)
Fig.5 Reverse power dissipation vs. Reverse voltage
0.12
Average rectified current I
O
(A)
0.25
Average rectified current I
O
(A)
0.10
sin(θ=180°)
DC
0.20
D=1/2
sin(θ=180°)
DC
0.08
D=1/2
0.15
D=1/3
D=1/6
0.06
0.04
D=1/3
D=1/6
0.10
0.02
Tj =125°C
0
−25
VR=VRRM/2
0.05
VR=VRRM/2
Rth(j-a)=400°C/W
Per one device
0
25
50
75
100 125
0
−25
Tj =125°C
Rth(j-a)=400°C/W
Two device total
0
25
50
75
100 125
Ambient temperature Ta (
°C
)
Fig.6 Average rectified current vs. Ambient temperature
Ambient temperature Ta (
°C
)
Fig.7 Average rectified current vs. Ambient temperature
Rev.2.00, Dec.15.2003, page 4 of 5
HRW0202B
Package Dimensions
As of January, 2003
Unit: mm
(0.65)
0.10
3–0.4
+ 0.05
–
0.16
– 0.06
+ 0.10
1.5 ± 0.15
+ 0.2
– 0.6
0 – 0.1
(0.95) (0.95)
1.9 ± 0.2
0.3
2.8
+ 0.1
–
(0.3)
+ 0.2
1.1
– 0.1
(0.65)
2.8
Package Code
JEDEC
JEITA
Mass (reference value)
MPAK
—
Conforms
0.011 g
Rev.2.00, Dec.15.2003, page 5 of 5
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