2SJ186
Silicon P Channel MOS FET
REJ03G0849-0200
(Previous: ADE-208-1184)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
R
)
D
3
2
1
G
4
1. Gate
2. Drain
3. Source
4. Drain
S
Note: Marking is “CY”.
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ186
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
–200
±15
–0.5
–1.0
–0.5
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Pch
Tch
Note 2
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note:
3. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
–200
±15
—
—
–2.0
—
—
0.18
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
8.0
10.0
0.3
75
32
5
6
6
17
15
0.95
100
Max
—
—
±10
–50
–4.0
12.0
15.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±12
V, V
DS
= 0
V
DS
= –160 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –0.25 A, V
GS
= –10 V
Note 3
I
D
= –1 A, V
GS
= –10 V
I
D
= –0.25 A, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –0.25 A
V
GS
= –10 V
R
L
= 120
Ω
I
F
= –0.5 A, V
GS
= 0
I
F
= –0.5 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 3
Note 3
Rev.2.00 Sep 07, 2005 page 2 of 6
2SJ186
Main Characteristics
Power vs. Temperature Derating
1.2
–10
Maximum Safe Operation Area
Pch (W)
I
D
(A)
–1
10
10
0
µ
PW
1
s
m
=1
s
DC
0m
Op
s(
era
1s
tio
ho
n(
t)
Tc
=2
Operation in
5°
this area is
C)
limited by R
DS (on)
Ta = 25°C
–3
–10
–30
0.8
µ
s
Channel Dissipation
Drain Current
0
50
100
150
–0.1
0.4
–0.01
0
–0.001
–1
–100 –300 –1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
–1.0
–10 V
–8 V
Pulse Test
–1.0
Typical Transfer Characteristics
–25°C
25°C
Tc = 75°C
I
D
(A)
–0.8
I
D
(A)
Drain Current
–6 V
–0.8
–0.6
–0.6
–5 V
Drain Current
–0.4
–0.4
–0.2
V
GS
= –4 V
0
0
–10
–20
–30
–40
–50
–0.2
V
DS
= –20 V
Pulse Test
0
0
–2
–4
–6
–8
–10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
–20
Pulse Test
–16
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
–12
20
10
5
V
GS
= –10 V
–15 V
–1 A
–8
–0.5 A
I
D
= –0.2 A
0
0
–4
–8
–12
–16
–20
–4
2
1
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SJ186
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
24
Pulse Test
V
GS
= –10 V
20
–1 A
1
0.5
Tc = –25°C
25°C
75°C
0.2
0.1
0.05
16
–0.5 A
I
D
= –0.2 A
8
12
0.02
0.01
–0.01 –0.02
V
DS
= –20 V
Pulse Test
–0.05 –0.1 –0.2
–0.5
–1
4
–40
0
40
80
120
160
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
1000
1000
300
100
30
10
3
Capacitance vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200
100
50
Pulse Test
Ta = 25°C
di / dt = 50 A /
µs
V
GS
= 0
–0.05 –0.1 –0.2
–0.5
–1
Ciss
Coss
20
10
–0.01 –0.02
Crss
1
0
–10
–20
–30
–40
–50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
–200
V
DS
–4
Switching Time t (ns)
V
DD
= –100 V
–150 V
–200 V
V
GS
(V)
0
0
100
50
tf
20
10
5
tr
2 V = –10 V, V = –30 V
GS
DD
PW = 2
µs,
duty
≤
1 %
1
–0.01 –0.02 –0.05 –0.1 –0.2
td(off)
td(on)
Drain to Source Voltage
–400
V
GS
V
DD
= –200 V
–150 V
–100 V
–8
–600
–12
–800
I
D
= –0.5 A
0
2
4
6
8
–16
–1000
–20
10
Gate to Source Voltage
–0.5
–1
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SJ186
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
Reverse Drain Current I
DR
(A)
Pulse Test
–0.8
–0.6
–0.4
V
GS
=
–
10 V
–0.2
0, 5 V
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage
V
SD
(V)
Rev.2.00 Sep 07, 2005 page 5 of 6
京公网安备 11010802033920号
EEWORLD
