TC58FVM6(T/B)2A(FT/XB)65
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64MBIT (8M
×
8 BITS/4M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 8388608 words
×
8 bits or as 4194304 words
×
16 bits. The TC58FVM6T2A/B2A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
•
•
•
•
Power supply voltage
V
DD
=
2.3 V~3.6 V
Operating temperature
Ta
= −40°C~85°C
Organization
8M
×
8 bits/4M
×
16 bits
Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
•
•
Block erase architecture
8
×
8 Kbytes/127
×
64 Kbytes
Boot block architecture
TC58FVM6T2A: top boot block
TC58FVM6B2A: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access Time (Random/Page)
V
DD
2.7~3.6 V
2.3~3.6 V
CL = 30 pF
65 ns/25 ns
70 ns/30 ns
CL = 100 pF
70 ns/30 ns
75 ns/35 ns
•
•
•
•
Power consumption
10
µA
(Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
11 mA (Address Increment Read operation)
5 mA (Page Read operation)
Package
TC58FVM6**AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVM6**AXB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
•
2003-01-29
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TC58FVM6(T/B)2A(FT/XB)65
MODE SELECTION
BYTE MODE WORD MODE
MODE
Read/Page Read
ID Read (Manufacturer Code)
ID Read (Device Code)
Standby
Output Disable
Write
Block Protect 1
Block Protect 2
Verify Block Protect
Temporary Block Unprotect
Hardware Reset/Standby
Boot Block Protect
CE
OE
WE
H
H
H
*
H
(2)
(2)
A9
A9
V
ID
V
ID
*
*
A9
V
ID
*
V
ID
*
*
*
A6
A6
L
L
*
*
A6
L
L
L
*
*
*
A1
A1
L
L
*
*
A1
H
H
H
*
*
*
A0
A0
L
H
*
*
A0
L
L
L
*
*
*
RESET
WP/ACC
DQ0~DQ7
D
OUT
Code
Code
High-Z
High-Z
D
IN
*
*
Code
*
High-Z
*
(1)
DQ0~DQ15
D
OUT
Code
Code
High-Z
High-Z
D
IN
*
*
Code
*
High-Z
*
L
L
L
H
*
L
L
L
L
*
*
*
L
L
L
*
H
H
V
ID
H
L
*
*
*
H
H
H
H
*
H
H
V
ID
H
V
ID
L
*
*
*
*
*
*
*
*
*
*
*
*
L
H
H
*
*
*
Notes:
*
=
V
IH
or V
IL
, L
=
V
IL
, H
=
V
IH
(1) DQ8~DQ14 are High-Z and DQ15/A-1 is Address Input in Byte Mode.
Addresses are A21~A0 in Word Mode ( BYTE
=
V
IH
), A21~A-1 in Byte Mode ( BYTE
=
V
IL
).
(2) Pulse input
ID CODE TABLE
CODE TYPE
Manufacturer Code
Device Code
Verify Block Protect
TC58FVM6T2A
TC58FVM6B2A
A21~A12
*
*
*
BA
(2)
A6
L
L
L
L
A1
L
L
L
H
A0
L
H
H
L
CODE (HEX)
0098h
0057h
0058h
Data
(3)
(1)
Notes:
*
=
V
IH
or V
IL
, L
=
V
IL
, H
=
V
IH
(1) DQ8~DQ14 are High-Z and DQ15/A-1 is Address Input in Byte Mode.
(2) BA: Block Address
(3) 0001h - Protected Block
0000h - Unprotected Block
2003-01-29
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