silicon diffused power transistor
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | SFM |
| package instruction | PLASTIC, SOT-199, 3 PIN |
| Contacts | 3 |
| Manufacturer packaging code | SOT199 |
| Reach Compliance Code | unknow |
| Other features | FORMED LEAD OPTIONS ARE AVAILABLE |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 800 V |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 5 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 45 W |
| Maximum power dissipation(Abs) | 45 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 6000 ns |
| VCEsat-Max | 5 V |
京公网安备 11010802033920号
EEWORLD
