Not Recommended for New Design
Please Use FZT605
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
*
*
Guaranteed h
FE
Specified up to 2A
Fast Switching
DEVICE TYPE IN FULL
FZT604 - FZT704
FZT605 - FZT705
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
FZT604
120
100
10
4
1.5
2
C
FZT604
FZT605
PARTMARKING DETAIL -
COMPLEMENTARY TYPES -
E
C
B
FZT605
140
120
UNIT
V
V
V
A
A
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
120
140
100
120
10
0.01
10
0.01
10
I
EBO
FZT604
FZT605
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
I
CES
0.1
10
10
1.0,
1.5
1.8
1.7
2K
5K
2K
100K
0.5K
V
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector Cut-Off
Current
FZT604
FZT605
FZT604
FZT605
FZT604
FZT605
I
C
=100
µ
A
I
C
=100
µ
A
I
C
=10mA*
I
C
=10mA*
I
E
=100
µ
A
V
CB
=100V
V
CB
=100V,
T
amb
=100°C
V
CB
=120V
V
CB
=120V,
T
amb
=100°C
V
EB
=8V
V
CES
=100V
V
CES
=120V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Emitter-Base Breakdown Voltage
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
Collector-EmitterSaturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
V
V
V
V
3 - 202
Not Recommended for New Design
Please Use FZT605
FZT604
FZT605
PARAMETER
Transition Frequency
Input capacitance
Output Capacitance
Switching Times
SYMBOL
f
T
C
ibo
C
obo
t
on
t
off
MIN.
150
90 Typical
15 Typical
0.5 Typical
1.6 Typical
MAX.
UNIT
MHz
pF
pF
pF
pF
CONDITIONS
I
C
=100mA,V
CE
=10V
f=20MHz
V
EB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
= I
B2
= 0.5mA
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
3 - 203
Not Recommended for New Design
Please Use FZT605
FZT604
FZT605
TYPICAL CHARACTERISTICS
1.8
1.6
- (Volts)
1.4
1.2
1.0
0.8
I
C
/I
B
=100
- Gain normalised to 1 Amp
-55°C
+25°C
+100°C
+175°C
2.5
-55°C
+25°C
+100°C
2.0
V
CE
=5V
1.5
V
0.6
0.4
0.2
0
1.0
0.5
h
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
2.2
2.0
1.8
1.6
-55°C
+25°C
+100°C
+175°C
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-55°C
+25°C
+100°C
- (Volts)
1.4
1.2
1.0
0.8
I
C
/I
B
=100
- (Volts)
V
V
CE
=5V
0.8
0.6
0.4
0.1
1
10
0.01
0.1
1
10
V
0.6
0.4
0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
BE(on)
v I
C
10
10
I -Collector Current (A)
I -Collector Current (A)
1
1
0.1
DC
1s
100ms
10ms
1ms
100
µ
s
0.1
DC
1s
100ms
10ms
1ms
100
µ
s
+
0.01
1
10
100
1000
+
0.01
1
10
100
1000
V
CE
- Collector Emitter Voltage (V)
V
CE
- Collector Emitter Voltage (V)
FZT604 Safe Operating Area
3 - 204
FZT605 Safe Operating Area
stm32/stm8
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