3SK292
TOSHIBA Field Effect Transistor
Silicon N-Channel Dual Gate MOS Type
3SK292
TV Tuner, VHF RF Amplifier Application
•
•
•
Superior cross modulation performance.
Low reverse transfer capacitance: C
rss
= 20 fF (typ.)
Low noise figure: NF = 1.4dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
G1S
V
G2S
I
D
P
D
T
ch
T
stg
Rating
12.5
±8
±8
30
150
125
−55~125
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3J1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.013 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
I
G1SS
I
G2SS
V
(BR) DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
⎪Y
fs
⎪
C
iss
C
rss
G
ps
NF
Test Condition
V
DS
=
0, V
G1S
= ±6
V, V
G2S
=
0
V
DS
=
0, V
G1S
=
0, V
G2S
= ±6
V
V
G1S
= −0.5
V, V
G2S
= −0.5
V,
I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
0, V
G2S
=
4.5 V
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
100
μA
V
DS
=
6 V, V
G2S
=
4.0 V, I
D
=
100
μA
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 kHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 MHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
500 MHz (Figure 1)
Min
⎯
⎯
12.5
⎯
0.3
0.5
19.5
⎯
⎯
23.5
⎯
Typ.
⎯
⎯
⎯
⎯
0.9
1.0
23.5
2.5
20
26.0
1.4
Max
±50
±50
⎯
0.1
1.3
1.5
⎯
3.1
40
⎯
2.5
Unit
nA
nA
V
mA
V
V
mS
pF
fF
dB
dB
1
2007-11-01
3SK292
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
20070701-EN GENERAL
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
•
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
•
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
RF/Wirelessly
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