3SK295
Silicon N-Channel Dual Gate MOS FET
ADE-208-387
1st. Edition
Application
UHF RF amplifier
Features
•
Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
•
Capable of low voltage operation
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK295
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
3SK295
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
I
DS(on)
Min
12
±8
±8
—
—
0.5
–0.5
0
16
1.2
0.6
—
16
—
Typ
—
—
—
—
—
—
—
—
20.8
1.5
0.9
0.01
19.5
2.0
Max
—
—
—
±100
±100
10
+0.5
+1.0
—
2.2
1.2
0.03
—
3
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
V
DS
= 4 V, V
G2S
= 3V,
I
D
= 10 mA, f = 900 MHz
Test conditions
I
D
= 200
µA
, V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±10 µA,
V
G2S
= V
DS
= 0
I
G2
=
±10 µA,
V
G1S
= V
DS
= 0
V
G1S
=
±6
V, V
G2S
= V
DS
= 0
V
G2S
=
±6
V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.5V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 MHz
Gate 1 to source cutoff voltage V
G1S(off)
Gate 2 to source cutoff voltage V
G2S(off)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note: Marking is “ZQ–”
|y
fs
|
Ciss
Coss
Crss
PG
NF
3
3SK295
Maximum Channel Power
Dissipation Curve
Pch (mW)
200
(mA)
Typical Output Characteristics
20
V
G2S
= 3 V
16
1.0 V
I
D
12
0.8 V
8
0.6 V
4
V
G1S
= 0.4 V
2
4
6
8
10
Drain to source voltage V
DS
(V)
100
Drain current
1.2 V
Pulse test
150
Channel Power Dissipation
50
0
50
100
150
200
Ambient Temperature Ta (°C)
0
1.5 V
12
Drain current I
D
(mA)
I
D
(mA)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
V
DS
= 6 V
2.0 V
Pulse test
2.5 V
16
Drain Current vs. Gate2 to Source Voltage
20
2.0 V
V
DS
= 6 V
1.5 V
16
1.0 V
12
Pulse test
Drain current
8
1.0 V
4
V
G2S
= 0.5 V
0
1
2
3
4
5
8
V
G1S
= 0.5 V
4
0
1
2
3
4
5
Gate1 to source voltage V
G1S
(V)
Gate2 to source voltage V
G2S
(V)
4
3SK295
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Forward transfer admittance
|y
fs
| (mS)
30
V
DS
= 6 V
f = 1 kHz
V
G2S
= 3.0 V
18
2.5 V
Power gain
2.0 V
1.5 V
6
0.5 V
0
0.4
0.8
1.2
1.6
2.0
1.0 V
Power Gain vs. Drain Current
25
PG (dB)
24
20
15
12
10
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
2
5
10
I
D
(mA)
20
5
0
1
Gate1 to source voltage V
G1S
(V)
Drain current
Noise Figure vs. Drain Current
5
NF (dB)
PG (dB)
Power gain
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
25
Power Gain vs. Drain to Source Voltage
4
20
3
15
Noise figure
2
10
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
V
DS
10
(V)
1
0
1
5
2
5
10
I
D
(mA)
20
0
Drain current
Drain to source voltage
5
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