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3SK297

Description
silicon N-channel dual gate mos fet
File Size187KB,9 Pages
ManufacturerRenata SA
Websitehttp://www.renata.com/
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3SK297 Overview

silicon N-channel dual gate mos fet

3SK297
Silicon N-Channel Dual Gate MOS FET
REJ03G0816-0300
(Previous ADE-208-389A)
Rev.3.00
Aug.10.2005
Application
UHF / VHF RF amplifier
Features
Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
Capable of low voltage operation
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZP–”
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 8

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3SK297 3SK297ZP-TL-E
Description silicon N-channel dual gate mos fet silicon N-channel dual gate mos fet
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