3SK297
Silicon N-Channel Dual Gate MOS FET
REJ03G0816-0300
(Previous ADE-208-389A)
Rev.3.00
Aug.10.2005
Application
UHF / VHF RF amplifier
Features
•
Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
•
Capable of low voltage operation
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZP–”
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 8
3SK297
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate 1 to source breakdown voltage
Gate 2 to source breakdown voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Gate 1 to source cutoff voltage
Gate 2 to source cutoff voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
I
DS(on)
V
G1S(off)
V
G2S(off)
|y
fs
|
Ciss
Coss
Crss
PG
NF
PG
NF
NF
Min
12
±8
±8
—
—
0.5
0
0
16
2.4
0.8
—
22
—
12
—
—
Typ
—
—
—
—
—
—
—
—
20
2.9
1.0
0.023
25
1.0
15
3.2
2.8
Max
—
—
—
±100
±100
10
+1.0
+1.0
—
3.4
1.4
0.04
—
1.8
—
4.5
3.5
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
dB
dB
dB
Test conditions
I
D
= 200
µA
, V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
= ±10
µA,
V
G2S
= V
DS
= 0
I
G2
= ±10
µA,
V
G1S
= V
DS
= 0
V
G1S
= ±6 V, V
G2S
= V
DS
= 0
V
G2S
= ±6 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.75 V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 MHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 200 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 900 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 60 MHz
Rev.3.00 Aug 10, 2005 page 2 of 8
3SK297
Maximum Channel Power
Dissipation Curve
200
20
V
G2S
= 3 V
1.4 V
Pulse test
Pch (mW)
Typical Output Characteristics
(mA)
16
1.2 V
Channel Power Dissipation
150
Drain current
100
I
D
12
1.0 V
8
0.8 V
0.6 V
V
G1S
= 0.4 V
50
4
0
50
100
150
200
0
2
4
6
8
10
Ambient Temperature
Ta (°C)
Drain to source voltage
V
DS
(V)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
2.0 V
1.5 V
2.5 V
V
DS
= 6 V
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
V
DS
= 6 V
2.0 V
2.5 V
1.5 V
1.0 V
Pulse test
I
D
(mA)
16
I
D
(mA)
Drain current
Pulse test
16
12
1.0 V
12
Drain current
8
8
4
V
G2S
= 0.5 V
0
1
2
3
4
5
4
V
G1S
= 0.5 V
0
1
2
3
4
5
Gate1 to source voltage
V
G1S
(V)
Gate2 to source voltage
V
G2S
(V)
|y
fs
| (mS)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
30
V
DS
= 6 V
f = 1 kHz
24
V
G2S
= 3.0 V
Power Gain vs. Drain Current
PG (dB)
Power gain
2.5 V
Forward transfer admittance
24
18
18
12
2.0 V
1.5 V
12
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
2
5
10
20
6
1.0 V
0.5 V
2.0
6
0
1
0
0.4
0.8
1.2
1.6
Gate1 to source voltage
V
G1S
(V)
Drain current
I
D
(mA)
Rev.3.00 Aug 10, 2005 page 3 of 8
3SK297
Noise Figure vs. Drain Current
3.0
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
Power Gain vs. Drain to Source Voltage
30
NF (dB)
PG (dB)
Power gain
2.4
24
Noise figure
1.8
18
1.2
12
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
2
4
6
8
10
0.6
0
1
6
2
5
10
20
0
Drain current
I
D
(mA)
Drain to source voltage
V
DS
(V)
Noise Figure vs. Drain to Source Voltage
2.0
20
Power Gain vs. Drain Current
NF (dB)
PG (dB)
Power gain
1.6
16
1.2
12
Noise figure
0.8
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
2
4
6
8
10
8
V
DS
= 6 V
V
G2S
= 3 V
f = 900 MHz
2
5
10
20
0.4
4
0
1
0
Drain to source voltage
V
DS
(V)
Drain current
I
D
(mA)
Noise Figure vs. Drain Current
10
V
DS
= 6 V
V
G2S
= 3 V
f = 900 MHz
Power Gain vs. Drain to Source Voltage
20
NF (dB)
8
PG (dB)
Power gain
16
6
12
Noise figure
4
8
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
2
0
1
4
2
5
10
20
0
Drain current
I
D
(mA)
Drain to source voltage
V
DS
(V)
Rev.3.00 Aug 10, 2005 page 4 of 8
3SK297
Noise Figure vs. Drain to Source Voltage
5
NF (dB)
Noise figure
4
3
2
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
1
0
Drain to source voltage
V
DS
(V)
Rev.3.00 Aug 10, 2005 page 5 of 8
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