SGU2N60UFDTU datasheet, PDF - EEWORLD Datasheet

SGU2N60UFDTU: DescriptionInsulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-251, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size571KB，10 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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SGU2N60UFDTU Overview

Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-251, IPAK-3

Parameter Name	Attribute value
Objectid	8144541206
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	5.05
Other features	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Maximum collector current (IC)	2.4 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	291 ns
Nominal on time (ton)	43 ns

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