Preliminary
HY5W5A6DF-xF
4Banks x 4M x 16bits Synchronous DRAM
DESCRIPTION
The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs,
2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld
PCs.
The Hynix HY5W5A6DF is a 268,435,456bit CMOS Synchronous Dynamic Random Access Memory. It
is organized as 4banks of 4,194,304x16.
The Low Power SDRAM provides for programmable options including CAS latency of 1, 2, or 3, READ
or WRITE burst length of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave).
And the Low Power SDRAM also provides for special programmable options including Partial Array Self
Refresh of a quarter bank, a half bank, 1bank, 2banks, or all banks, Temperature Compensated Self
Refresh of 15, 45, 70, or 85 degrees C. A burst of Read or Write cycles in progress can be terminated
by a burst terminate command or can be interrupted and replaced by a new burst Read or Write com-
mand on any cycle(This pipelined design is not restricted by a 2N rule).
Deep Power Down Mode is a additional operating mode for Low Power SDRAM. This mode can achieve
maximum power reduction by removing power to the memory array within each SDRAM. By using this
feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and
giving up mother-board power-line layout flexibility.
FEATURES
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Standard SDRAM Protocol
Internal 4bank operation
Voltage : VDD = 2.5V, VDDQ = 1.8V
& 2.5V
LVCMOS compatible I/O Interface
Low Voltage interface to reduce I/O power
Low Power Features ( HY5W56DF Series can’t support these features)
- PASR(Partial Array Self Refresh)
- TCSR(Temperature Compensated Self Refresh)
- DS(Drive Strength)
- Deep Power Down Mode
CAS latency of 1, 2, or 3
Packages : 54ball, 0.8mm pitch FBGA
-25 ~ 70C Operation
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ORDERING INFORMATION
Part Number
HY5W5A6D(L/S)F-HF
HY5W56DF-HF
HY5W5A6D(L/S)F-PF
HY5W56DF-PF
HY5W5A6D(L/S)F-SF
HY5W66DF-SF
HHY5W5A6D(L/S)F-BF
HY5W56DF-BF
Clock
CAS
Frequency Latency
133MHz
105MHz
105MHz
66Mhz
3
2
3
2
Organization
4banks x 4Mb x 16
4banks x 4Mb x 16
4banks x 4Mb x 16
4banks x 4Mb x 16
Interface
LVCMOS
LVCMOS
LVCMOS
LVCMOS
Package
54ball
FBGA
* HY5xxxxx-B Series can support 40Mhz CL1 and 33Mhz CL1.
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.4 / June. 2003
HY5W5A6DF-xF
BALL DESCRIPTION
BALL OUT
F2
F3
SYMBOL
CLK
CKE
TYPE
INPUT
INPUT
DESCRIPTION
Clock : The system clock input. All other inputs are registered
to the SDRAM on the rising edge of CLK
Clock Enable : Controls internal clock signal and when deacti-
vated, the SDRAM will be one of the states among power
down, suspend or self refresh
Chip Select : Enables or disables all inputs except CLK, CKE,
UDQM and LDQM
Bank Address : Selects bank to be activated during RAS activ-
ity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA8
Auto-precharge flag : A10
G9
G7,G8
CS
BA0, BA1
INPUT
INPUT
H7, H8, J8, J7,
J3, J2, H3, H2,
H1, G3, H9,
G2, G1
F8, F7, F9
F1, E8
A8, B9, B8,
C9, C8, D9,
D8, E9, E1,
D2, D1, C2,
C1, B2, B1, A2
A9, E7, J9, A1,
E3, J1
A7, B3, C7,
D3, A3, B7,
C3, D7
E2
A0 ~ A12
INPUT
RAS, CAS,
WE
UDQM,
LDQM
DQ0 ~
DQ15
INPUT
INPUT
I/O
Command Inputs : RAS, CAS and WE define the operation
Refer function truth table for details
Data Mask:Controls output buffers in read mode and masks
input data in write mode
Data Input/Output:Multiplexed data input/output pin
VDD/VSS
VDDQ/
VSSQ
NC
SUPPLY
SUPPLY
Power supply for internal circuits
Power supply for output buffers
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No connection
Rev. 0.4 / June. 2003
3
MCU
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