HYMD216M646D6-M datasheet, PDF

HYMD216M646D6-M: DescriptionDDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA200; Categorystorage storage; File Size311KB，20 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD216M646D6-M Overview

DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA200

Parameter Name	Attribute value
Objectid	1125504490
package instruction	DIMM, DIMM200,24
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.75 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
memory density	1073741824 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	200
word count	16777216 words
character code	16000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	0.88 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL

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