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CY62128DV30_06

Description
1-Mb (128k x 8) static ram
File Size579KB,11 Pages
ManufacturerCypress Semiconductor
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CY62128DV30_06 Overview

1-Mb (128k x 8) static ram

CY62128DV30
1-Mb (128K x 8) Static RAM
Features
• Very high speed: 55 and 70 ns
• Wide voltage range: 2.2V to 3.6V
• Pin compatible with CY62128V
• Ultra-low active power
— Typical active current: 0.85 mA @ f = 1 MHz
— Typical active current: 5 mA @ f = f
MAX
• Ultra-low standby power
• Easy memory expansion with CE
1
, CE
2
, and OE
features
• Automatic power-down when deselected
• Available in Pb-free and non Pb-free 32-lead SOIC,
32-lead TSOP and 32-lead Small TSOP, non Pb-free
32-lead Reverse TSOP packages
also has an automatic power-down feature that significantly
reduces power consumption by 90% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when deselected Chip
Enable 1 (CE
1
) HIGH or Chip Enable 2 (CE
2
) LOW. The
input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when: deselected Chip Enable 1 (CE
1
)
HIGH or Chip Enable 2 (CE
2
) LOW, outputs are disabled (OE
HIGH), or during a write operation (Chip Enable 1 (CE
1
) LOW
and Chip Enable 2 (CE
2
) HIGH and Write Enable (WE) LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE
1
) LOW with Chip Enable 2 (CE
2
) HIGH and Write Enable
(WE) LOW. Data on the eight I/O pins is then written into the
location specified on the Address pin (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable 1 (CE
1
) LOW with Chip Enable 2 (CE
2
) HIGH and
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O
pins.
The eight input/output pins (I/O
o
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH) or
during a write operation (CE
1
LOW, CE
2
HIGH), and WE
LOW).
Functional Description
[1]
The CY62128DV30 is a high-performance CMOS static RAM
organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
®
) in
portable applications such as cellular telephones. The device
Logic Block Diagram
Data in Drivers
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
ROW DECODER
I/O0
I/O1
SENSE AMPS
I/O2
I/O3
I/O4
I/O5
128K x 8
ARRAY
CE
1
CE
2
WE
COLUMN
DECODER
Power-
down
I/O6
I/O7
A 12
A 13
A 14
OE
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
A 15
A 16
Cypress Semiconductor Corporation
Document #: 38-05231 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 19, 2006
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