DATA SHEET
PHOTOCOUPLER
PS2506-1,-2,-4, PS2506L-1,-2,-4
HIGH ISOLATION VOLTAGE
AC INPUT, DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
−NEPOC
TM
Series−
DESCRIPTION
The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2506-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2506L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• AC input response
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 2 000 % TYP.)
• High-speed switching (t
r
, t
f
= 100
µ
s TYP.)
• Taping product number (PS2506L-1-E3, E4, F3, F4)
(PS2506L-2-E3, E4)
• UL approved (File No. E72422 (S) )
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
The information in this document is subject to change without notice.
Document No. P11305EJ4V0DS00 (4th edition)
Date Published September 1997 NS
Printed in Japan
The mark
shows major revised points.
©
1988
PS2506-1,-2,-4,PS2506L-1,-2,-4
PACKAGE DIMENSIONS (in millimeters)
DIP Type
PS2506-1 (New Package)
4 3
PS2506-2
8 7 6 5
4.6 ± 0.35
1 2
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
7.62
4.55
MAX.
3.8
MAX.
4.55
MAX.
3.8
MAX.
10.2 MAX.
1 2 3 4
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
7.62
6.5
2.8
MIN.
0.65
2.8
MIN.
0.65
6.5
1.25±0.15
2.54
0.50 ± 0.10
0.25
M
0 to 15˚
1.25±0.15
0.50 ± 0.10
0.25
M
2.54
0 to 15˚
PS2506-1
PS2506-4
16 15 1413 12 1110 9
4 3
1 2 3 4 5 6 7 8
5.1 MAX.
1 2
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
7.62
3.8
MAX.
4.55
MAX.
3.8
MAX.
4.55
MAX.
20.3 MAX.
1, 3, 5, 7. Anode,
Cathode
2, 4, 6, 8. Cathode,
Anode
9,11,13,15. Emitter
10,12,14,16. Collector
6.5
6.5
7.62
2.8
MIN.
0.65
2.8
MIN.
0.65
1.25±0.15
2.54
0.50 ± 0.10
0.25
M
0 to 15˚
1.25±0.15
2.54
0.50 ± 0.10
0.25
M
0 to 15˚
Caution New package 1-ch only
2
PS2506-1,-2,-4,PS2506L-1,-2,-4
Lead Bending Type
PS2506L-1 (New Package)
4 3
PS2506L-2
8 7 6 5
4.6 ± 0.35
1 2
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
0.05 to 0.2
10.2 MAX.
1 2 3 4
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
7.62
3.8
MAX.
0.05 to 0.2
6.5
7.62
3.8
MAX.
1.25±0.15
0.25
M
2.54
0.90 ± 0.25
9.60 ± 0.4
6.5
1.25±0.15
0.25
M
2.54
0.9 ± 0.25
9.60 ± 0.4
PS2506L-1
PS2506L-4
16 15 1413 12 1110 9
4 3
1 2 3 4 5 6 7 8
5.1 MAX.
1 2
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
0.05 to 0.2
6.5
20.3 MAX.
1, 3, 5, 7. Anode,
Cathode
2, 4, 6, 8. Cathode,
Anode
9,11,13,15. Emitter
10,12,14,16. Collector
6.5
7.62
3.8
MAX.
7.62
3.8
MAX.
1.25±0.15
0.25
M
2.54
0.9 ± 0.25
9.60 ± 0.4
1.25±0.15
0.25
M
2.54
0.9 ± 0.25
9.60 ± 0.4
Caution New package 1-ch only
0.05 to 0.2
3
PS2506-1,-2,-4,PS2506L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C,
unless otherwise specified)
Parameter
Symbol
Ratings
PS2506-1,
PS2506L-1
Diode
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Unit
PS2506-2,-4
PS2506L-2,-4
±80
mA
1.2
120
±1
40
6
mW/°C
mW/ch
A
V
V
160
1.6
160
mA/ch
mW/°C
mW/ch
Vr.m.s.
°C
°C
I
F
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
1.5
150
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
200
2.0
200
5 000
–55 to +100
–55 to +150
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25 °C, RH = 60 % between input and output
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
Parameter
Diode
Forward Voltage
Terminal Capacitance
Transistor
Collector to Emitter Dark
Current
Current Transfer Ratio
CTR Ratio
*1
Symbol
V
F
C
t
I
CEO
I
F
= ±10 mA
Conditions
MIN.
TYP.
1.17
100
MAX.
1.4
Unit
V
pF
V = 0 V, f = 1.0 MHz
V
CE
= 40 V, I
F
= 0 mA
400
nA
Coupled
CTR
CTR
1
/
CTR
2
V
CE (sat)
I
F
= ±1 mA, V
CE
= 2 V
I
F
= 1 mA, V
CE
= 2 V
200
0.3
2 000
1.0
3.0
%
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
I
F
= ±1 mA, I
C
= 2 mA
1.0
V
Ω
R
I-O
C
I-O
t
r
t
f
V
I-O
= 1.0 kV
V = 0 V, f = 1.0 MHz
V
CC
= 10 V, I
C
= 2 mA, R
L
= 100
Ω
10
11
0.5
100
100
pF
µ
s
*2
*1
CTR
1
= I
C1
/I
F1
, CTR
2
= I
C2
/I
F2
I
F1
I
F2
I
C1
V
CE
I
C2
*2
Test circuit for switching time
Pulse Input
PW = 1 ms
Duty Cycle = 1/10
V
OUT
R
L
= 100
Ω
I
F
V
CC
50
Ω
4
PS2506-1,-2,-4,PS2506L-1,-2,-4
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
150
Diode Power Dissipation P
D
(mW)
PS2506-1
PS2506L-1
100
PS2506-2
PS2506L-2
PS2506-4
PS2506L-4
50
1.2 mW/˚C
1.5 mW/˚C
150
PS2506-2
PS2506L-2
100 PS2506-4
PS2506L-4
PS2506-1
PS2506L-1
2 mW/˚C
1.6 mW/˚C
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
50
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
80
60
Forward Current I
F
(mA)
T
A
= +100 ˚C
+60 ˚C
+25 ˚C
40
20
0
–20
–40
–60
10
5
1
0.5
0 ˚C
–25 ˚C
–55 ˚C
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–80
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
Forward Voltage V
F
(V)
Forward Voltage V
F
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
200
10 mA
5 mA
1 mA
10
5
0.5 mA
100
Collector Current I
C
(mA)
10 000
V
CE
= 2 V
5V
10 V
24 V
40 V
50
1000
100
10
0.2 mA
1
0.5
0.2
0.4
I
F
= 0.1 mA
1
–50
–25
0
25
50
75
100
0.6
0.8
1.0
1.2
1.4
1.6
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
5
Power technology
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