BUW32P datasheet, PDF - EEWORLD Datasheet

BUW32P: Description10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218; CategoryDiscrete semiconductor The transistor; File Size279KB，6 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BUW32P Overview

10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Reach Compliance Code	not_compliant
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	12
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	105 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	2100 ns
Maximum opening time (tons)	600 ns
VCEsat-Max	1.5 V
Base Number Matches	1

	BUW32P	BUW32PFI
Description	10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218	10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218
Is it Rohs certified?	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics
Reach Compliance Code	not_compliant	not_compliant
Maximum collector current (IC)	10 A	10 A
Collector-emitter maximum voltage	350 V	350 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	12	12
JEDEC-95 code	TO-218	TO-218
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power consumption environment	105 W	55 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	2100 ns	2100 ns
Maximum opening time (tons)	600 ns	600 ns
VCEsat-Max	1.5 V	1.5 V
Base Number Matches	1	1

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