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BUW32PFI

Description
10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218
CategoryDiscrete semiconductor    The transistor   
File Size279KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BUW32PFI Overview

10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218

BUW32PFI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment55 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2100 ns
Maximum opening time (tons)600 ns
VCEsat-Max1.5 V
Base Number Matches1

BUW32PFI Related Products

BUW32PFI BUW32P
Description 10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218 10A, 350V, PNP, Si, POWER TRANSISTOR, TO-218
Is it Rohs certified? incompatible incompatible
Maker STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant
Maximum collector current (IC) 10 A 10 A
Collector-emitter maximum voltage 350 V 350 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 12 12
JEDEC-95 code TO-218 TO-218
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 55 W 105 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 2100 ns 2100 ns
Maximum opening time (tons) 600 ns 600 ns
VCEsat-Max 1.5 V 1.5 V
Base Number Matches 1 1

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