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ZTX605STOB

Description
transistor darl npn E-line
Categorysemiconductor    Discrete semiconductor   
File Size91KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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ZTX605STOB Overview

transistor darl npn E-line

ZTX605STOB Parametric

Parameter NameAttribute value
Datasheets
ZTX604,5
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypeNPN - Darling
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 5V
Power - Max1W
Frequency - Transiti150MHz
Mounting TypeThrough Hole
Package / CaseE-Line-3, Formed Leads
Supplier Device PackageE-Line (TO-92 compatible)
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX604
ZTX605
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
ZTX604
MIN.
120
100
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1
10
1.0
1.5
1.8
1.7
3-212
MAX.
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX605
MIN.
140
120
10
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
E-Line
TO92 Compatible
ZTX604
120
100
10
4
1
1
5.7
-55 to +200
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=100V
V
CB
=120V
V
CB
=100V,
T
amb
=100°C
V
CB
=120V,
T
amb
=100°C
V
EB
=8V
V
CES
=100V
V
CES
=120V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
ZTX605
140
120
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.0
1.5
1.8
1.7
V
V
V
V

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Description transistor darl npn E-line transistor darl npn E-line
Standard Package 2,000 2,000 -
Category Discrete Semiconductor Products Discrete Semiconductor Products -
Family Transistors (BJT) - Single Transistors (BJT) - Single -
Packaging Tape & Reel (TR) Tape & Reel (TR) -
Transistor Type NPN - Darling NPN - Darling -
Current - Collector (Ic) (Max) 1A 1A -
Voltage - Collector Emitter Breakdown (Max) 120V 120V -
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A 1.5V @ 1mA, 1A -
Current - Collector Cutoff (Max) 10µA 10µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 5V 2000 @ 1A, 5V -
Power - Max 1W 1W -
Frequency - Transiti 150MHz 150MHz -
Mounting Type Through Hole Through Hole -
Package / Case E-Line-3, Formed Leads E-Line-3, Formed Leads -
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) -
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