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ZTX749A_J61Z

Description
trans pnp 35v 2A E-line
Categorysemiconductor    Discrete semiconductor   
File Size38KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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ZTX749A_J61Z Overview

trans pnp 35v 2A E-line

ZTX749A_J61Z Parametric

Parameter NameAttribute value
Datasheets
ZTX749A
Product Photos
TO-92L
Standard Package1,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingBulk
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)35V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 2V
Power - Max1W
Frequency - Transiti100MHz
Mounting TypeThrough Hole
Package / CaseE-Line-3
Supplier Device PackageE-Line (TO-92 compatible)
ZTX749A
ZTX749A
PNP Low Saturation Transistor
• This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
C
BE
TO-226
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
-35
-45
-5
-2
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -10mA
I
C
= -100µA
I
E
= -100µA
V
CB
= -30V
V
CB
= -30V, T
A
= 100°C
V
EB
= -4V
I
C
= -50mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -100mA, V
CE
= -5V
f = 100MHz
100
70
100
75
15
Min.
-35
-45
-5
-100
-10
-100
Max.
Units
V
V
V
nA
µA
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics*
300
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
obo
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
-300
-500
-1.25
-1
100
mV
V
V
P
F
Small-Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Max.
1
125
Units
W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. C, August 2003

ZTX749A_J61Z Related Products

ZTX749A_J61Z
Description trans pnp 35v 2A E-line
Standard Package 1,000
Category Discrete Semiconductor Products
Family Transistors (BJT) - Single
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 35V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 2V
Power - Max 1W
Frequency - Transiti 100MHz
Mounting Type Through Hole
Package / Case E-Line-3
Supplier Device Package E-Line (TO-92 compatible)

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