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ZTX558STOB

Description
bipolar small signal pnp high voltage
Categorysemiconductor    Discrete semiconductor   
File Size75KB,2 Pages
ManufacturerAll Sensors
Environmental Compliance
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ZTX558STOB Overview

bipolar small signal pnp high voltage

ZTX558STOB Parametric

Parameter NameAttribute value
MakerAll Sensors
Product Categorybipolar small signal
RoHSyes
ConfigurationSingle
Transistor polarityPNP
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO400 V
Emitter-Base voltage VEBO- 5 V
Collector continuous current- 0.2 A
Maximum DC collector current0.2 A
Power dissipation1 W
Maximum operating frequency50 MHz (Min)
Maximum operating temperature+ 200 C
EncapsulationBulk
Minimum operating temperature- 55 C
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
* P
tot
= 1 Watt
ZTX558
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
-400
-400
-5
-200
1
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Collector-Base
Breakdown Voltage
Switching times
SYMBOL MIN.
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
95
1600
3-202
100
100
15
50
5
-400
-400
-5
-100
-100
-100
-0.2
-0.5
-0.9
-0.9
300
MHz
pF
ns
ns
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-6mA
I
C
=-50mA, I
B
=-5mA
IC=-50mA, V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%

ZTX558STOB Related Products

ZTX558STOB ZTX558STOA
Description bipolar small signal pnp high voltage bipolar small signal pnp high voltage
Maker All Sensors All Sensors
Product Category bipolar small signal bipolar small signal
RoHS yes yes
Configuration Single Single
Transistor polarity PNP PNP
Installation style Through Hole Through Hole
Package/box TO-92 TO-92
Collector-emitter maximum voltage VCEO 400 V 400 V
Emitter-Base voltage VEBO - 5 V - 5 V
Collector continuous current - 0.2 A - 0.2 A
Maximum DC collector current 0.2 A 0.2 A
Power dissipation 1 W 1 W
Maximum operating frequency 50 MHz (Min) 50 MHz (Min)
Maximum operating temperature + 200 C + 200 C
Encapsulation Bulk Bulk
Minimum operating temperature - 55 C - 55 C
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