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ZXMN6A11DN8TC

Description
mosfet small signal Dl 30v N chnl umos
Categorysemiconductor    Discrete semiconductor   
File Size637KB,8 Pages
ManufacturerAll Sensors
Environmental Compliance
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ZXMN6A11DN8TC Overview

mosfet small signal Dl 30v N chnl umos

ZXMN6A11DN8TC Parametric

Parameter NameAttribute value
MakerAll Sensors
Product CategoryMOSFET small signal
RoHSyes
ConfigurationDual Dual Drai
Transistor polarityN-Channel
Resistor drain/source RDS (on)0.18 Ohms
Drain/source breakdown voltage60 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current3.2 A
Power dissipation1.25 W
Maximum operating temperature+ 150 C
Installation styleSMD/SMT
Package/boxSO-8
EncapsulationReel
Minimum operating temperature- 55 C
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.120 @ V
GS
= 10V
0.180 @ V
GS
= 4.5V
I
D
(A)
3.2
2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
D1
D2
G1
S1
G2
S2
Applications
DC-DC converters
Power management functions
Motor control
S1
G1
D1
D1
D2
D2
Pin out - top view
Ordering information
Device
ZXMN6A11DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
S2
G2
Device marking
ZXMN
6A11D
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com

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ZXMN6A11DN8TC
Description mosfet small signal Dl 30v N chnl umos
Maker All Sensors
Product Category MOSFET small signal
RoHS yes
Configuration Dual Dual Drai
Transistor polarity N-Channel
Resistor drain/source RDS (on) 0.18 Ohms
Drain/source breakdown voltage 60 V
Gate/source breakdown voltage +/- 20 V
Drain continuous current 3.2 A
Power dissipation 1.25 W
Maximum operating temperature + 150 C
Installation style SMD/SMT
Package/box SO-8
Encapsulation Reel
Minimum operating temperature - 55 C
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