2N6076_D75Z datasheet, PDF - EEWORLD Datasheet

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2N6076_D75Z: Descriptiontransistor pnp 25v 500ma TO-92; Categorysemiconductor Discrete semiconductor; File Size61KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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transistor pnp 25v 500ma TO-92

2N6076_D75Z Parametric

Parameter Name	Attribute value
Datasheets
2N6076
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package	2,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single
Packaging	Tape & Box (TB)
Transistor Type	PNP
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	25V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Power - Max	625mW
Frequency - Transiti	-
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3

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2N6076 — PNP Small Signal Transistor

July 2008

2N6076

PNP Small Signal Transistor

Features

• BVceo .....25V(Min)

• hFE ...... 100(Min) @ Vce=10V, Ic=10mA

• Pb free

Absolute Maximum Ratings

Symbol

CBO

CEO

EBO

STG

= 25°C unless otherwise noted

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Junction Temperature

Storage Temperature Range

Value

-25

-5

500

150

-55 ~ 150

Unit

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics*

T =25qC unless otherwise noted

Symbol

TJA

Parameter

Collector Power Dissipation, by R

TJA

Thermal Resistance, Junction to Ambient

Max

625

200

Unit

qC/W

* 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3. These ratings are based on a maximum junction temperature of 150 degrees C.

4. Minimum land pad.

Electrical Characteristics*

=25qC unless otherwise noted

Symbol

CBO

CEO

EBO

CBO

CES

EBO

(sat)

(on)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Output Capacitance

Small Signal Current Gain

Test Condition

= -100PA, I

= 0

= -10mA, I

= 0

= -10PA, I

= 0

= -25V

= -25V, T=+100qC

= -25V

= -3V

= 1V, I

= -10mA

= -10mA, I

= -1mA

= -10mA, I

= -1mA

= -10V, I

= -10mA

= -10V, f = 1MHz

= -10V, I

= 10mA, f = 1kHz

Min.

-25

-5

Max.

Unit

-100

100

500

-0.25

-0.80

-0.5

100

-1.2

750

* DC Item are tested by Pulse Test : Pulse Widthd300us, Duty Cycled2%

2N6076 Rev. 1.0.0

www.fairchildsemi.com

2N6076_D75Z Related Products

	2N6076_D75Z	2N6076_D27Z	2N6076_D26Z
Description	transistor pnp 25v 500ma TO-92	transistor pnp 25v 500ma TO-92	transistor pnp 25v 500ma TO-92
Standard Package	2,000	2,000	-
Category	Discrete Semiconductor Products	Discrete Semiconductor Products	-
Family	Transistors (BJT) - Single	Transistors (BJT) - Single	-
Packaging	Tape & Box (TB)	Tape & Reel (TR)	-
Transistor Type	PNP	PNP	-
Current - Collector (Ic) (Max)	500mA	500mA	-
Voltage - Collector Emitter Breakdown (Max)	25V	25V	-
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA	250mV @ 1mA, 10mA	-
Current - Collector Cutoff (Max)	100nA	100nA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V	100 @ 10mA, 1V	-
Power - Max	625mW	625mW	-
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	-
Supplier Device Package	TO-92-3	TO-92-3	-

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