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2N6076_D26Z

Description
transistor pnp 25v 500ma TO-92
Categorysemiconductor    Discrete semiconductor   
File Size61KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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2N6076_D26Z Overview

transistor pnp 25v 500ma TO-92

2N6076 — PNP Small Signal Transistor
July 2008
2N6076
PNP Small Signal Transistor
Features
• BVceo .....25V(Min)
• hFE ...... 100(Min) @ Vce=10V, Ic=10mA
• Pb free
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Value
-25
-25
-5
500
150
-55 ~ 150
Unit
V
V
V
mA
qC
qC
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
T =25qC unless otherwise noted
a
Symbol
P
C
R
TJA
Parameter
Collector Power Dissipation, by R
TJA
Thermal Resistance, Junction to Ambient
Max
625
200
Unit
mW
qC/W
* 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150 degrees C.
4. Minimum land pad.
Electrical Characteristics*
T
a
=25qC unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
cb
h
fe
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Small Signal Current Gain
Test Condition
I
C
= -100PA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10PA, I
C
= 0
V
CE
= -25V
V
CE
= -25V, T=+100qC
V
CE
= -25V
V
CE
= -3V
V
CE
= 1V, I
C
= -10mA
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CB
= -10V, f = 1MHz
V
CE
= -10V, I
C
= 10mA, f = 1kHz
Min.
-25
-25
-5
Max.
Unit
V
V
V
-100
10
-100
-100
100
500
-0.25
-0.80
-0.5
1
100
-1.2
13
750
nA
uA
nA
nA
V
V
V
pF
* DC Item are tested by Pulse Test : Pulse Widthd300us, Duty Cycled2%
© 2007 Fairchild Semiconductor Corporation
2N6076 Rev. 1.0.0
1
www.fairchildsemi.com

2N6076_D26Z Related Products

2N6076_D26Z 2N6076_D75Z 2N6076_D27Z
Description transistor pnp 25v 500ma TO-92 transistor pnp 25v 500ma TO-92 transistor pnp 25v 500ma TO-92
Standard Package - 2,000 2,000
Category - Discrete Semiconductor Products Discrete Semiconductor Products
Family - Transistors (BJT) - Single Transistors (BJT) - Single
Packaging - Tape & Box (TB) Tape & Reel (TR)
Transistor Type - PNP PNP
Current - Collector (Ic) (Max) - 500mA 500mA
Voltage - Collector Emitter Breakdown (Max) - 25V 25V
Vce Saturation (Max) @ Ib, Ic - 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) - 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce - 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max - 625mW 625mW
Mounting Type - Through Hole Through Hole
Package / Case - TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package - TO-92-3 TO-92-3

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