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2N6731STZ

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size26KB,1 Pages
ManufacturerAll Sensors
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2N6731STZ Overview

Bipolar small signal -

2N6731STZ Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityNPN
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO80 V
Emitter-Base voltage VEBO5 V
Maximum DC collector current1 A
Power dissipation1000 mW
Maximum operating frequency500 MHz
Maximum operating temperature+ 200 C
Minimum operating temperature- 55 C
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 – MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 100 at I
C
= 350 mA
* P
tot
=1 Watt
2N6731
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
100
80
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
100
80
5
0.1
10
0.35
1.0
100
100
50
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=1mA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=350mA, I
B
=35mA*
IC=350mA, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=350mA, V
CE
=2V*
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(on)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Collector-Base
Capacitance
f
T
C
CB
300
500
20
MHz
pF
I
C
=200mA, V
CE
=5V
f=20MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
3-10

2N6731STZ Related Products

2N6731STZ 2N6731STOB 2N6731STOA 2N6731
Description Bipolar small signal - Bipolar small signal - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity NPN NPN NPN NPN
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Collector-emitter maximum voltage VCEO 80 V 80 V 80 V 80 V
Emitter-Base voltage VEBO 5 V 5 V 5 V 5 V
Maximum DC collector current 1 A 1 A 1 A 1 A
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating frequency 500 MHz 500 MHz 500 MHz 500 MHz
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
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