2SJ412
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (L
2
-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications
•
•
•
•
•
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.15
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 7.7 S (typ.)
Low leakage current: I
DSS
=
−100 μA
(max) (V
DS
=
−100
V)
Enhancement mode: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−100
−100
±20
−16
−64
60
292
−16
6
150
−55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10S1B
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Weight: 1.5 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.08
83.3
Unit
°C/W
°C/W
―
―
2-10S2B
JEITA
TOSHIBA
Weight: 1.5 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
−25
V, T
ch
= 25°C (initial), L = 1.84 mH, R
G
= 25
Ω,
I
AR
=
−16
A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
2SJ412
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Gate-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
0V
V
GS
−10
V
50
Ω
I
D
=
−8
A
R
L
= 6.25
Ω
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−100
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−6
A
V
GS
=
−10
V, I
D
=
−6
A
V
DS
=
−10
V, I
D
=
−6
A
Min
―
―
−100
−0.8
―
―
4.5
―
―
―
―
V
OUT
―
30
―
ns
―
18
―
Typ.
―
―
―
―
0.25
0.15
7.7
1100
210
440
18
Max
±10
−100
―
−2.0
0.32
0.21
―
―
―
―
―
Unit
μA
μA
V
V
Ω
S
pF
pF
pF
Turn-on time
Switching time
Fall time
t
on
t
f
V
DD
≈ −50
V
Duty
≤
1%, t
w
= 10
μs
―
65
―
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −80
V, V
GS
=
−10
V, I
D
=
−16
A
―
―
―
48
29
19
―
―
―
nC
nC
nC
Source-Drain Rating and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
Test Condition
―
Min
―
Typ.
―
Max
−16
Unit
A
I
DRP
V
DSF
t
rr
Q
rr
―
I
DR
=
−16
A, V
GS
= 0 V
I
DR
=
−16
A, V
GS
= 0 V
dI
DR
/dt = 50 A/μs
―
―
―
―
―
―
160
0.5
−64
1.7
―
―
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
J412
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
MCU
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