Transistors
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
General Purpose Transistor
(−50V,
−0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /
2SA933AS
!Features
1) Excellent h
FE
linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
!
External dimensions
(Units : mm)
2SA1037AK
(1)
2SA1576A
(1)
0.95 0.95
1.9
2.9
0.65 0.65
0.8
0.7
0.4
(3)
0.3
(2)
(3)
1.25
1.6
2.8
0.15
0.15
2.1
0.2
(2)
0.8
1.1
!
Structure
Epitaxial planar type.
PNP silicon transistor
0.3to0.6
0to0.1
0.1to0.4
Each lead has same dimensions
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
0to0.1
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : F
∗
Abbreviated symbol : F
∗
2SA1774
0.2
(1)
(2)
2SA2029
1.2
0.8
(2)
(3)
(1)
0.5 0.5
1.0
0.3
0.8
1.6
0.15
0.2
1.2
0.32
0.13
0to0.1
0.55
0.5
0.1Min.
0to0.1
0.7
0.15Max.
0.22
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collecto
ROHM : VMT3
EIAJ :
Abbreviated symbol : F
∗
Abbreviated symbol : F
∗
2SA933AS
4
3
2
(15Min.)
3Min.
0.45
2.5
5
(1) (2) (3)
0.5 0.45
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
FE
0.4 0.4
(3)
1.6
0.2
0.2
(1) Base
(2) Emitter
(3) Collector
0.9
1.3
2.0
Transistors
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1037AK, 2SA1576A
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−60
−50
−6
−0.15
0.2
P
C
0.15
0.3
Tj
Tstg
150
−55~+150
˚C
˚C
W
Unit
V
V
V
A (DC)
Collector power
dissipation
2SA2029, 2SA1774
2SA933AS
Junction temperature
Storage temperature
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5.0
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=−50µA
I
C
=−1µA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V,
I
C
=−1mA
V
CE
=−12V,
I
E
=
2mA, f
=
30MHz
V
CB
=−12V,
I
E
=
0A, f
=
1MHz
Conditions
!
Packaging specifications and h
FE
Package
Code
Basic ordering
unit (pieces)
T146
3000
−
−
−
−
−
−
−
T106
3000
−
−
Taping
TL
3000
−
−
−
−
−
−
−
T2L
8000
TP
5000
−
−
−
−
Type
2SA2029
h
FE
QRS
2SA1037AK QRS
2SA1576A
2SA1774
2SA933AS
QRS
QRS
QRS
h
FE
values are classified as follows:
Item
h
FE
Q
120~270
R
180~390
S
270~560
Transistors
!
Electrical characteristic curves
−50
COLLECTOR CURRENT : Ic (
mA)
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
V
CE
=−6V
COLLECTOR CURRENT : I
C
(
mA)
−10
−35.0
Ta=25˚C
−31.5
−28.0
−24.5
−6
−21.0
−17.5
−4
−14.0
−10.5
−2
−7.0
−3.5µA
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
−100
COLLECTOR CURRENT : I
C
(
mA
)
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
Ta=25˚C
−500
−450
−400
−350
−300
−8
−80
−60
−250
−200
−40
−150
−100
−20
−50µA
I
B
=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(
V)
0
−1
−2
−3
−4
−5
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
500
500
Ta=25˚C
V
CE
=−5V
−3V
−1V
DC CURRENT GAIN : h
FE
200
Ta=100˚C
25˚C
−40˚C
−1
Ta=25˚C
DC CURRENT GAIN : h
FE
−0.5
200
100
−0.2
I
C
/I
B
=50
−0.1
20
10
100
50
50
V
CE
=−6V
−5 −10 −20 −50 −100
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
l
C
/l
B
=10
−0.5
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
=−12V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
−1
1000
20
Cib
10
500
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Co
b
−0.2
Ta=100˚C
25˚C
−40˚C
200
5
−0.1
100
2
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
50
0.5
1
2
5
10
20
50
100
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT : I
E
(
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Real-time operating system RTOS
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