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5GWJZ47_06

Description
high speed rectifier application
File Size231KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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5GWJZ47_06 Overview

high speed rectifier application

5GWJZ47
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
5GWJZ47
HIGH SPEED RECTIFIER APPLICATION
Repetitive Peak Reverse Voltage
Average Forward Current
Low Forward Voltage
: V
RRM
= 40 V
: I
F (AV)
= 5 A
: V
FM
= 0.55 V (Max.)
Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
40
5
50 (50Hz)
60 (60Hz)
−40~125
−40~150
UNIT
V
A
A
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
3-10C3A
Weight: 2.0 g (typ.)
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Junction Capacitance
Thermal Resistance (With Heat Sink)
SYMBOL
V
FM
I
RRM
C
j
R
th (j−c)
I
FM
= 5A
V
RRM
= 40V
V
R
= 10V, f = 1MHz
Junction to Case
(Note 1)
TEST CONDITION
TYP.
200
MAX
0.55
3.5
4.0
UNIT
V
mA
pF
°C / W
Note 1: Apply silicone greace to the contact surface between heat sink and case of rectifier.
MARKING
Abbreviation Code
5GWJZ47
Part No.
5GWJZ47
5GWJZ47
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
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