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40MT120UHAPBF

Description
bridge rectifier 1200 volt 80 amp half bridge
CategoryDiscrete semiconductor    The transistor   
File Size297KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

40MT120UHAPBF Overview

bridge rectifier 1200 volt 80 amp half bridge

40MT120UHAPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts12
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time20 weeks 1 day
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)80 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)463 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
VCEsat-Max4.91 V
Base Number Matches1
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
• Al
2
O
3
DBC
• Optional SMD thermistor (NTC)
MTP
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
PRODUCT SUMMARY
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 25 °C
1200 V
3.36 V
80 A
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation (only IGBT)
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 105 °C
T
C
= 25 °C
T
C
= 104 °C
TEST CONDITIONS
MAX.
1200
80
40
160
A
160
21
160
± 20
V
2500
463
W
185
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94507
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
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