DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
PRF947
UHF wideband transistor
Product specification
Supersedes data of 1999 Mar 01
1999 Jul 23
Philips Semiconductors
Product specification
UHF wideband transistor
FEATURES
•
Small size
•
Low noise
•
Low distortion
•
High gain
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
1
Top view
2
MAM062
PRF947
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
Marking code:
V0.
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
C
re
f
T
G
UM
NF
P
tot
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
T
s
= 60
°C;
note 1
P
tot
= 250 mW
MIN.
−
−
−
−
−
−
TYP.
0.3
8.5
16
1.5
−
−
MAX.
−
−
−
−
250
460
UNIT
pF
GHz
dB
dB
mW
K/W
1999 Jul 23
2
Philips Semiconductors
Product specification
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
P
tot
= 250 mW; T
s
= 60
°C;
note 1
VALUE
460
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
average collector current
total power dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−
−65
−
PRF947
MAX.
20
10
1.5
50
50
250
+150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
UNIT
K/W
1999 Jul 23
3
Philips Semiconductors
Product specification
UHF wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
I
C
= 100
µA;
I
E
= 0
I
C
= 100
µA;
I
B
= 0
I
E
= 10
µA;
I
C
= 0
V
CB
= 10 V; I
E
= 0
V
EB
= 1 V; I
C
= 0
I
C
= 5 mA; V
CE
= 6 V
I
C
= 15 mA; V
CE
= 6 V
AC characteristics
C
re
f
T
|s
21
|
2
G
UM
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
NF
noise figure
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
−
−
−
−
−
−
−
0.3
8.5
14.5
16
10
1.5
2.1
20
10
1.5
−
−
50
−
−
−
−
−
−
100
100
PARAMETER
CONDITIONS
MIN.
TYP.
PRF947
MAX.
−
−
−
100
100
200
−
−
−
−
−
−
−
−
UNIT
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
dB
s
21 2
=
10 log -------------------------------------------------------- dB
(
1
–
s
11 2
) (
1
–
s
22 2
)
1999 Jul 23
4
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
MGS496
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
120
MGS497
hFE
80
200
40
100
0
0
50
100
150
Ts (
°
C)
200
0
0
10
20
30
40
50
IC (mA)
V
CE
= 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
DC current gain as a function of collector
current; typical values.
MGS498
handbook, halfpage
0.5
MGS499
Cre
handbook, halfpage
10
(pF)
0.4
fT
(GHz)
8
0.3
6
0.2
4
0.1
2
0
0
4
8
VCB (V)
12
0
0
10
20
30
I C (mA)
40
I
C
= I
c
= 0; f = 1 MHz.
V
CE
= 6 V; f
m
= 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
1999 Jul 23
5
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