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T17N1100COB

Description
Silicon Controlled Rectifier, 17000mA I(T), 1100V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size579KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

T17N1100COB Overview

Silicon Controlled Rectifier, 17000mA I(T), 1100V V(DRM),

T17N1100COB Parametric

Parameter NameAttribute value
Objectid1167302967
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time50 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current200 mA
Maximum leakage current8 mA
On-state non-repetitive peak current390 A
Maximum on-state current17000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1100 V
surface mountNO
Trigger device typeSCR

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