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IXFN24N100

Description
IXYS SEMICONDUCTOR - IXFN24N100 - MOSFET; N; SOT-227B
Categorysemiconductor    Discrete semiconductor   
File Size103KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXFN24N100 Overview

IXYS SEMICONDUCTOR - IXFN24N100 - MOSFET; N; SOT-227B

HiPerFET
TM
Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
ISOL
1mA
Mounting torque
Terminal connection torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
IXFN24N100
V
DSS
I
D25
R
DS(on)
t
rr
=
=
1000V
24A
390mΩ
Ω
250ns
Maximum Ratings
1000
1000
±20
±
30
24
96
24
3
5
568
-55 ... +150
150
-55 ... +150
300
2500
3000
1.5/13
1.3/11.5
30
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche rated
Low package inductance
Fast intrinsic Rectifier
Applications
t = 1min
t = 1s
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 12A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1000
3.0
5.5
±200
100
2
390
V
V
nA
μA
mA
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
© 2008 IXYS CORPORATION, All rights reserved
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