Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
V
CESAT
I
C
I
CM
P
tot
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V
BE
= 0 V
I
C
= 0.2 A; I
B
= 20 mA
T
mb
≤
25 ˚C
I
C
= 0.2 A; I
B(on)
= 20 mA
TYP.
BUX
-
-
-
-
-
-
0.28
MAX.
86P
800
400
1
0.5
1
42
-
87P
1000
450
V
V
V
A
A
W
µs
UNIT
PINNING - SOT82
PIN
1
2
3
DESCRIPTION
emitter
collector
base
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (peak value) t
p
= 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
BUX
-
-
-
-
-
-
-
-
-
-40
-
MAX.
86P
800
400
87P
1000
450
5
0.5
1
0.2
0.3
0.3
42
150
150
V
V
V
A
A
A
A
A
W
˚C
˚C
UNIT
T
mb
≤
25 ˚C
1
Turn-off current.
November 1995
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
100
MAX.
3
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
V
CEsat
V
CEsat
V
BEsat
h
FE
V
CEOsust
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
26
400
450
TYP.
-
-
-
-
-
-
50
-
-
MAX.
100
1.0
1
0.8
1
1
125
-
-
UNIT
µA
mA
mA
V
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter cut-off current
V
EB
= 5 V; I
C
= 0 A
Collector-emitter saturation voltages I
C
= 0.1 A; I
B
= 10 mA
I
C
= 0.2 A; I
B
= 20 mA
Base-emitter saturation voltage
I
C
= 0.2 A; I
B
= 20 mA
DC current gain
I
C
= 50 mA; V
CE
= 5 V
Collector-emitter sustaining voltage I
C
= 100 mA;
BUX86P
I
Boff
= 0; L = 25 mH
BUX87P
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load).
t
on
t
s
t
f
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Turn-off fall time
CONDITIONS
I
C
= 0.2 A; I
Bon
= 20 mA; -I
Boff
= 40 mA;
V
CC
= 250 V
TYP.
MAX.
UNIT
µs
µs
µs
µs
T
mb
= 95 ˚C
0.25
2
0.28
-
0.5
3.5
-
1.3
November 1995
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
VCC
10
Zth / (K/W)
bux86p
RL
VIM
0
tp
T
RB
T.U.T.
0.5
1
0.2
0.1
0.05
0.1
0.02
P
D
tp
D=
t
p
T
t
T
D= 0
0.01
1.0E-06
0.0001
t/s
0.01
1
Fig.1. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; tp = 20
µ
s;
δ
= tp / T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
ICon
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
90 %
90 %
VBESAT / V
0.9
BUX86P
IC
10 %
ts
ton
toff
IBon
10 %
tr
30ns
0.6
0
5
0.7
0.8
IC =
0.2 A
0.1 A
50 mA
tf
IB
-IBoff
10
IB / mA
15
20
Fig.2. Switching times waveforms with resistive load.
Fig.5. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
10
VCESAT / V
BUX86P
8
IC =
50 mA
0.1 A
0.2 A
6
4
2
0
20
40
60
80
100
Tmb / C
120
140
0
0
5
10
15
IB / mA
20
25
30
Fig.3. Normalised power dissipation.
PD% = 100
⋅
PD/PD
25 ˚C
= f (T
mb
)
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
November 1995
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
hFE
1000
VCE=5V
Tj=25 C
BUX86P
Typical gain
Limit gain
10
IC / A
BUX87P
100
= 0.01
1
10
ICM max
IC max
1
0.001
0.01
IC / A
0.1
1
0.1
II
tp =
1 ms
Fig.7. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
.
Arrows indicate conditions protected by 100% test.
I
hFE
1000
VCE=5V
Tj=95 C
BUX86P
Typical gain
Limit gain
0.01
10 ms
DC
100
0.001
10
10
100
VCE / V
1000
Fig.10. Forward bias safe operating area. T
mb
= 25 ˚C
I
II
NB:
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30
±
5 newton force on the centre of the
envelope.
1
0.001
0.01
IC / A
0.1
1
Fig.8. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
hFE
1000
VCE=5V
Tj= -40 C
BUX86P
Typical gain
Limit gain
100
10
1
0.001
0.01
IC / A
0.1
1
Fig.9. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
November 1995
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
mounting
base
2.8
2.3
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
1
4.58
0.5
2
3
2.29
1) Lead dimensions within this
zone uncontrolled.
0.88
max
Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1995
5
Rev 1.100
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