MP6759
TOSHIBA GTR Module Silicon N Channel IGBT
MP6759
Motor Control Applications
High Power Switching Applications
Unit: mm
·
·
·
·
·
The electrodes are isolated from case.
6 IGBTs are built into 1 package.
Enhancement-mode
Low saturation voltage
: V
CE (sat)
= 2.7 V (max) (I
C
= 10 A)
High speed: t
f
= 0.35 µs (max) (I
C
= 10 A)
JEDEC
JEITA
TOSHIBA
―
―
2-78A1A
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
―
Weight: 44 g (typ.)
Rating
600
±20
10
20
10
20
40
150
−40
to 125
2500
(AC 1 minute)
1.5
Unit
V
V
A
Forward current
A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
W
°C
°C
V
N·m
1
2002-11-20
MP6759
Equivalent Circuit
+
GU
(BU)
GV
(BV)
GW
(BW)
U
V
W
GX
(BX)
−
GY
(BY)
GZ
(BZ)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
t
f
t
off
V
F
t
rr
R
th (j-c)
I
F
= 10 A, V
GE
= 0 V
I
F
= 10 A, di/dt =
−100
A/µs
Transistor
Diode
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
t
r
30
Ω
t
on
15 V
0V
−15
V
100
Ω
Test Condition
V
GE
= ±20 V, V
CE
= 0 V
V
CE
= 600 V, V
GE
= 0 V
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 A, V
GE
= 15 V
V
CE
= 10 V, V
GE
= 0 V, f = 1 MHz
Min
―
―
5
―
―
―
―
―
300 V
―
―
―
―
―
Typ.
―
―
―
2.1
720
0.3
0.4
0.2
0.4
―
―
―
―
Max
±200
1
8
2.7
―
―
―
µs
0.35
―
2.0
200
3.09
4.77
V
ns
°C/W
Unit
nA
mA
V
V
pF
2
2002-11-20
MP6759
I
C
– V
CE
20
Common emitter
Tc = 25°C
16
20
16
15
13
Common emitter
V
CE
– V
GE
(V)
Tc =
−40°C
12
(A)
I
C
12
Collector current
12
Collector-emitter voltage
V
CE
8
8
20
4
IC = 5 A
10
4
VGE = 11 V
0
0
1
2
3
4
5
0
0
4
8
12
16
20
Collector-emitter voltage
V
CE
(V)
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
16
Common emitter
16
Common emitter
V
CE
– V
GE
(V)
Tc = 25°C
12
(V)
Tc = 125°C
12
V
CE
Collector-emitter voltage
8
Collector-emitter voltage
V
CE
20
8
4
IC = 5 A
10
4
IC = 5 A
10
20
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
20
Common emitter
VCE = 5 V
16
I
C
Collector current
(A)
12
8
Tc = 125°C
4
25
−40
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
3
2002-11-20
MP6759
Switching Time – I
C
1
Common emitter
VCC = 300 V
VGE = ±15 V
RG = 100
Ω
Tc = 25°C
ton
tf
0.1
tr
0.05
0.03
0.02
1
3
5
10
30
50
100
0.1
10
30
5
3
Switching Time – R
G
Common emitter
VCC = 300 V
VGE = ±15 V
IC = 10 A
Tc = 25°C
0.5
(µs)
toff
0.3
Switching time
Switching time
(µs)
1
ton
tr
0.5
toff
0.3
tf
Collector current
I
C
(A)
50
100
300
500
1000
Gate resistance R
G
(Ω)
V
CE
, V
GE
– Q
G
20
Common emitter
RL = 30
Ω
Tc = 25°C
3000
C – V
CE
(V)
V
CE
16
VCE = 0 V
12
300
100
8
1000
(pF)
Cies
300
Collector-emitter voltage
Capacitance C
100
Coes
Common emitter
VGE = 0 V
f = 1 MHz
Tc = 25°C
1
3
10
30
100
200
30
4
10
5
0.5
8
16
24
32
40
Cres
300
1000
0
0
Collector-emitter voltage
Charge
Q
G
(nQ)
V
CE
(V)
I
F
– V
F
20
VGE = 0 V
16
10
t
rr
, I
rr
– I
F
Peak reverse recovery current I
rr
(A)
Reverse recovery time t
rr
(×100 ns)
Common cathode
5
trr
3
Forward current I
F
(A)
12
Tc = 125°C
8
25
−40
1
0.5
0.3
Irr
4
0
0
0.4
0.8
1.2
1.6
2.0
0.1
0
Common cathode
di/dt = 100 A/µs
VGE =
−10
V
Tc = 25°C
4
8
12
16
Forward voltage
V
F
(V)
Forward current
I
F
(A)
4
2002-11-20
MP6759
R
th
– t
w
100
50
30
10
Thermal transient resistance
R
th
(°C/W)
Diode
5
3
IGBT
1
0.5
0.3
0.1
0.05
0.03
Tc = 25°C
0.01
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
40
100
Reverse Bias Area
Tj
≤
125°C
VGE = ±15 V
RG = 100
Ω
30
(A)
I
C
Collector current
10
100 µs*
1 s*
1 ms*
Collector current
1000
I
C
20
10
0
0
IC max (continuous)
DC operation
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
1
10
10 ms*
100
0.1
0.1
(A)
IC max (pulsed)*
50 µs*
Collector-emitter voltage
V
CE
(V)
200
400
600
800
Collector-emitter voltage
V
CE
(V)
5
2002-11-20
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