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PNZ331F

Description
PIN Photodiode
File Size181KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PNZ331F Overview

PIN Photodiode

PIN Photodiodes
PNZ331F
(PN331F)
PIN Photodiode
ø5.4±0.1
ø4.6±0.05
ø2.4±0.1
Unit : mm
1.
0.
0
±
1
Features
3.2±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
Metal package with shield pin
High quantum efficiency
High-speed response
High coupling capability suitable for plastic fiber and glass fiber
14.2±0.5
(0.3)
(0.5)
ø2.54±0.25
3-ø0.45±0.04
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Symbol
V
R
P
D
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
T
opr
T
stg
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Symbol
I
D
I
L
ue
Dark current
V
R
= 10V
Photo current
tin
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 50Ω
V
R
= 10V
Peak sensitivity wavelength
ce
Capacitance between pins
Photodetection sensitivity
/D
Frequency characteristics
isc
λ
P
C
t
R
θ
D
f
C*2
an
V
R
= 10V,
λ
= 800nm
Acceptance half angle
Measured from the optical axis to the half power point
Effective photodetection area
Photodetection surface shape
Note 1) Spectral sensitivity : Sensitivity at wavelengths exceeding 400 nm as a percentage, is 100% to maximum sensitivity.
Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles.
Note 3) The glass strength of this product cannot withstand loads of 0.5 kg or greater. This fact needs to be taken into consideration
if optical fibers are to be mounted on the product.
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit (see figure below) Note : Detection photo current –3 dB
*1
Sig.IN
λ
P
= 800nm
50Ω
V
R
= 10V
(Input pulse)
Sig.OUT
(Output pulse)
R
L
t
d
t
r
t
f
90%
10%
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±
2
3
1
1.
0
±
0.
1
For optical fiber communication systems
Ratings
30
50
Unit
V
mW
˚C
˚C
1: Anode
2: Case
3: Cathode
Dimensions of detection area
1.1
0.88
Unit : mm
– 25 to +100
– 40 to +100
Active region
A1
ø0.1
Conditions
min
4
typ
0.1
7
max
10
Unit
nA
µA
nm
pF
on
900
50
3
MHz
A/W
deg.
mm
0.45
0.55
40
Ma
int
en
0.88
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1
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