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PNZ154

Description
Silicon NPN Phototransistor
File Size369KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PNZ154 Overview

Silicon NPN Phototransistor

This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ154
(PN154)
Silicon planar type
For optical control systems
Features
High sensitivity
Fast response: t
r
= 4
μs
(typ.)
Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs
Small size, thin side-view type package
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation
Storage temperature
Operating ambient temperature
T
opr
T
stg
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Symbol
I
L
I
CEO
λ
P
θ
t
r
Photocurrent
*1
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Rating
20
5
20
Unit
V
V
mA
°C
°C
100
mW
–25 to +85
–30 to +100
Conditions
Min
1.0
Typ
Max
0.2
0.5
V
CE
= 10 V, L = 500 lx
V
CE
= 10 V
0.01
0.2
27
4
4
800
I
L
= 1 mA, L = 1 000 lx
V
CE
= 10 V
The angle when the photocurrent is halved
V
CC
= 10 V, I
L
= 5 mA, R
L
= 100
W
10
10
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Sig. in
V
CC
Unit
μA
μA
V
nm
°
μs
μs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
Ma
int
en
Fall time
*2
ce
Rise time
*2
/D
isc
Half-power angle
an
on
t
f
Peak emission wavelength
tin
Pl
ue
Collector-emitter saturation voltage
*1
V
CE(sat)
di
Collector-emitter cutoff current (Base open)
(Input pulse)
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
Sig. out
R
L
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2009
SHE00020DED
1

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