Phototransistors
PNZ150L
Silicon NPN Phototransistor
Unit : mm
ø3.5±0.2
4.8±0.3
2.4 2.4
Not soldered
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
4.5±0.3
4.2±0.3
2.3
1.9
42.7±1.0
2.2
14.5
2.95
1.0
2-1.12
2-0.45±0.15
0.4±0.15
1.2
2-0.6±0.15
2-0.45±0.15
1
2
2.54
R1.75
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
100
–25 to +85
–30 to +100
Unit
V
mA
mW
˚C
˚C
1: Emitter
2: Collector
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Sensitivity to infrared emitters
Collector saturation voltage
Peak sensitivity wavelength
Response time
Acceptance half angle
*1
Symbol
I
CEO
S
IR*1
V
CE(sat)
λ
P
t
r
, t
f*2
θ
V
CEO
= 10V
Conditions
V
CE
= 10V, H = 15µW/cm
2
V
CE
= 10V, H = 15µW/cm
2
V
CEO
= 10V
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100Ω
Measured from the optical axis to the half power point
min
16
typ
0.01
0.2
800
4
35
max
0.2
0.5
Unit
µA
µA
V
nm
µs
deg.
Measurements were made using infrared light (λ = 940 nm) as a light source.
*2
Response time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
50Ω
R
L
1
Phototransistors
PNZ150L
P
C
— Ta
120
20
I
CE(L)
— V
CE
Ta = 25˚C
T = 2856K
10
2
I
CE(L)
— L
I
CE(L)
(mA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
100
I
CE(L)
(mA)
16
L = 2000 lx
1750 lx
1500 lx
1250 lx
1000 lx
8
750 lx
4
500 lx
250 lx
0
100 lx
0
4
8
12
16
20
24
10
Collector power dissipation
80
Collector photo current
60
Collector photo current
12
1
10
–1
40
20
10
–2
0
– 20
0
20
40
60
80
100
10
–3
1
10
10
2
10
3
10
4
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CE(L)
— Ta
10
2
V
CE
= 10V
T = 2856K
10
I
CEO
— Ta
V
CE
= 10V
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(mA)
Dark current I
CEO
(µA)
1
S (%)
Relative sensitivity
0
40
80
120
80
Collector photo current
60
L = 1000 lx
10
500 lx
10
–1
40
10
–2
20
1
– 40
0
40
80
120
10
–3
– 40
0
200
400
600
800
1000
1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
100
10˚
20˚
10
4
t
r
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
10
4
t
f
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
80
70
60
50
40
30
20
Relative sensitivity S (%)
90
30˚
10
3
10
3
Rise time t
r
(µs)
40˚
50˚
60˚
70˚
80˚
90˚
10
2
R
L
= 1kΩ
10
500Ω
100Ω
1
Fall time t
f
(µs)
10
2
R
L
= 1kΩ
10
500Ω
100Ω
1
10
–1
10
–2
10
–1
1
10
10
2
10
–1
10
–2
10
–1
1
10
10
2
Collector photo current
I
CE(L)
(mA)
Collector photo current
I
CE(L)
(mA)
2
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