Phototransistors
PNZ1270
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5±0.1
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Small size designed for easier mounting to printed circuit board
2.8±0.2
1.05±0.1
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
2
1
˚
2.2±0.15
(0.7)
0.15
(0.7)
45
1.8
2.8±0.2 1.8
Fast response : t
r
= 2.5
µs
(typ.)
R0.9
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
0.85
±
0.15
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
*1
Symbol
I
CEO
I
CE(L)*3
λ
P
θ
t
r*2
t
f*2
V
CE
= 10V
Conditions
V
CE
= 10V, L = 1000 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100Ω
min
0.8
typ
1
800
14
2.5
3.5
max
100
19.2
Unit
nA
mA
nm
deg.
µs
µs
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
50Ω
R
L
*3
I
CE(L)
Classifications
Class
I
CE(L)
(mA)
Q
0.8 to 2.4
R
1.6 to 4.8
S
3.2 to 9.6
T
6.4 to 19.2
0.4±0.1
1
Phototransistors
PNZ1270
P
C
— Ta
60
5
I
CE(L)
— V
CE
Ta = 25˚C
T = 2856K
L =1000 lx
10
5
I
CE(L)
— L
I
CE(L)
(µA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
50
I
CE(L)
(mA)
4
10
4
Collector power dissipation
40
Collector photo current
Collector photo current
3
30
10
3
2
500 lx
20
10
1
250 lx
100 lx
10
2
0
– 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10
10
10
2
10
3
10
4
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CEO
— Ta
10
3
V
CE
= 10V
10
5
I
CE(L)
— Ta
V
CE
= 10V
T = 2856K
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(mA)
Dark current I
CEO
(nA)
10
2
10
4
S (%)
Relative sensitivity
0
40
80
120
80
10
Collector photo current
60
40
10
3
1
20
10
–1
– 40
0
40
80
120
10
2
– 40
0
200
400
600
800
1000
1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
100
90
80
70
60
50
40
30
20
10˚
20˚
10
2
t
r
— I
CE(L)
V
CE
= 10V
Ta = 25˚C
10
2
t
f
— I
CE(L)
V
CE
= 10V
Ta = 25˚C
Relative sensitivity S (%)
30˚
10
10
Rise time t
r
(µs)
Fall time t
f
(µs)
R
L
= 1kΩ
500Ω
1
100Ω
R
L
= 1kΩ
500Ω
100Ω
40˚
50˚
60˚
70˚
80˚
90˚
1
10
–1
10
–1
10
–2
10
–2
10
–1
1
10
10
–2
10
–2
10
–1
1
10
Collector photo current
I
CE(L)
(mA)
Collector photo current
I
CE(L)
(mA)
2
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