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PNZ109L

Description
Silicon NPN Phototransistor
CategoryLED optoelectronic/LED    photoelectric   
File Size391KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PNZ109L Overview

Silicon NPN Phototransistor

PNZ109L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
package instructionMTGLR103-001, 3 PIN
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY, WITH DAYLIGHT FILTER
Coll-Emtr Bkdn Voltage-Mi20 V
ConfigurationSINGLE
Maximum dark power2000 nA
Infrared rangeYES
Nominal photocurrent3.5 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum on-state current0.03 A
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength900 nm
Maximum power dissipation0.15 W
shapeROUND
size4.6 mm
surface mountNO
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ109L
(PN109L)
Silicon planar type
For optical control systems
Features
High sensitivity: I
L
= 3.5 mA (min.)
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting devices:
λ
P
= 900 nm (typ.)
Fast response: t
r
= 5
μs
(typ.)
Long lifetime, high reliability
Parameter
Symbol
V
CEO
V
ECO
V
EBO
I
C
P
C
V
CBO
Collector-emitter voltage (Base open)
Collector-base voltage (Emitter open)
Emitter-collector voltage (Base open)
Collector current
Emitter-base voltage (Collector open)
Collector power dissipation
*
Storage temperature
Operating ambient temperature
T
opr
T
stg
Note) *: The rate of electric power reduction is 1.5 mW/°C above T
a
= 25°C.
Electrical-Optical Characteristics
T
a
= 25°C±3°C
an
Peak sensitivity wavelength
Half-power angle
Rise time
*2
Fall time
*2
ce
/D
Collector-emitter saturation voltage
*1
isc
Collector-emitter cutoff current (Base open)
on
tin
Photocurrent
*1
ue
Parameter
Symbol
I
L
I
CEO
λ
PD
θ
t
r
t
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Rating
20
30
3
5
Unit
V
V
V
V
30
mA
°C
°C
150
mW
–25 to +85
–30 to +100
Conditions
Min
3.5
Typ
Max
2.0
0.6
V
CE
= 10 V, L = 100 lx
V
CE
= 10 V
V
CE
= 10 V
I
L
= 1 mA, L = 500 lx
0.05
0.3
900
10
5
6
The angle when the photocurrent is
halved
V
CC
= 10 V, I
L
= 5 mA, R
L
= 100
W
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
di
Unit
mA
μA
V
nm
°
μs
μs
V
CE(sat)
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1:Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out (Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
R
L
Pl
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHE00012CED
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