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PNZ109CL

Description
Silicon NPN Phototransistor
CategoryLED optoelectronic/LED    photoelectric   
File Size235KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PNZ109CL Overview

Silicon NPN Phototransistor

PNZ109CL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
package instructionROHS COMPLIANT PACKAGE-3
Reach Compliance Codeunknow
Other featuresHIGH SENSITIVITY
Coll-Emtr Bkdn Voltage-Mi20 V
ConfigurationSINGLE
Maximum dark power2000 nA
Infrared rangeYES
Nominal photocurrent4 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum on-state current0.02 A
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength900 nm
Maximum power dissipation0.1 W
shapeROUND
size4.2 mm
surface mountNO
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ109CL
(PN109CL)
Silicon planar type
Unit: mm
For optical control systems
Features
High sensitivity: I
CE(L)
=
2 mA (min.)
Wide directivity characteristics for easy use
Fast response: t
r
=
5
µs
(typ.)
Signal mixing capability using base pin
Small size (low in height) package
Resin to cutoff visible light is used
12.7 min.
3.0
±0.3
2.0
±0.1
0.2
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
15
3-φ0.43
±0.05
2.54
±0.25
0
±
1.
φ4.2
±0.2
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CEO
V
ECO
I
C
Collector-emitter voltage (Base open)
Collector-base voltage (Emitter open)
Emitter-collector voltage (Base open)
V
CBO
V
EBO
P
C
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
*
Operating ambient temperature
Storage temperature
T
opr
T
stg
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
ue
Parameter
*1
Symbol
I
CE(L)
I
CEO
λ
p
θ
tin
Photocurrent
Dark current
Peak emission wavelength
Half-power angle
Rise time
*2
Fall time
*2
Ma
int
en
t
r
t
f
Collector-emitter saturation voltage
*1
V
CE(sat)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out
R
L
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
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0.
2
1.
0
±
0.
45
°
±3
°
φ5.75
max.
3
1
Rating
20
30
3
5
Unit
V
V
V
V
2
1: Emitter
2: Base
3: Collector
MTRLR103-002 Package
20
mA
°C
100
mW
°C
−25
to
+85
−30
to
+100
Conditions
Min
2.5
Typ
4.0
Max
Unit
mA
µA
nm
°
V
CE
=
10 V, L
=
500 lx
V
CE
=
10 V
V
CE
=
10 V
on
0.05
900
80
5
6
2.00
/D
isc
an
The angle from which photocurrent
becomes 50%
ce
V
CC
=
10 V, I
CE(L)
=
5 mA, R
L
=
100
I
CE(L)
=
1 mA, L
=
1 000 lx
µs
µs
V
0.3
0.6
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00010BED
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