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PNA4S11M

Description
Bipolar Integrated Circuit with Photodetection Function
File Size34KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PNA4S11M Overview

Bipolar Integrated Circuit with Photodetection Function

Photo IC
PNA4S11M
Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
7.6
(3.8)
Unit : mm
5.2
(2.6)
1
2
3.47
R1.7
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CC
P
D
T
opr
T
stg
Ratings
– 0.5 to +7
200
–20 to +60
– 30 to +70
Unit
V
mW
˚C
˚C
3
4
1: V
O
2: V
CC
3: GND
4: GND
Main Characteristics
(Ta = 25˚C V
CC
= 5V)
Parameter
Operating supply voltage
Current consumption
Maximum reception distance
Low-level output voltage
High-level output voltage
Low-level pulse width
High-level pulse width
PNA4S11M
Carrier frequency
PNA4S12M
PNA4S13M
PNA4S14M
*1
Symbol
V
CC
I
CC
L
max
*1
Conditions
No signal condition
L≤7.0m, 10L=400µA
No signal condition
L=7.0m, 16Pulse
L=7.0m, 16Pulse
min
4.7
1.8
7.0
typ
5.0
2.4
0.35
max
5.3
3.0
0.5
V
CC
600
600
Unit
V
mA
m
V
V
µs
µs
V
OL*2
V
OH
T
WL*1
T
WH*1
4.8
200
200
5.0
400
400
36.7
38.0
40.0
56.9
f
0
kHz
Fig.1 burst wave, L=L
max
, 16 pulses
Carrier wave : f
o
*2
Fig.2 continuous wave, L≤L
max
Carrier wave : f
o
400µs
400µs
Fig.1
Fig.2
1

PNA4S11M Related Products

PNA4S11M PNA4S14M PNA4S12M PNA4S13M
Description Bipolar Integrated Circuit with Photodetection Function Bipolar Integrated Circuit with Photodetection Function Bipolar Integrated Circuit with Photodetection Function Bipolar Integrated Circuit with Photodetection Function
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