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PNA4608M

Description
Bipolar Integrated Circuit with Photodetection Function
CategoryLED optoelectronic/LED    photoelectric   
File Size426KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PNA4608M Overview

Bipolar Integrated Circuit with Photodetection Function

PNA4608M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPanasonic
Reach Compliance Codeunknow
Other featuresSIDE VIEW
applicationREMOTE CONTROL
ConfigurationCOMPLEX
Infrared rangeYES
JESD-609 codee0
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature75 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLOGIC IC OUTPUT OPTOCOUPLER
shapeROUND
size4.5 mm
Maximum slew rate0.003 mA
Minimum supply voltage4.7 V
Nominal supply voltage5 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
This product complies with the RoHS Directive (EU 2002/95/EC).
Photo IC
PNA4601M
Photodiode with Photodetection Function
For infrared remote control systems
Features
Extension distance: 8 m or more
External parts not required
Adoption of visible light cutoff resin
Operating supply voltage
Power dissipation
V
CC
P
D
T
opr
T
stg
T
sol
Operating ambient temperature
Storage temperature
Soldering temperature
*
Note) *: Less than 5 s
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Symbol
V
CC
I
CC
Operating supply voltage
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– 0.5 to +7
200
V
mW
°C
°C
°C
–20 to +75
260
–40 to +100
Conditions
Min
4.7
1.8
8.0
Typ
5.0
2.4
Max
5.3
3.0
No signal condition
10.0
0.35
400
400
20
L
8.0 m, I
OL
= 400
μA
L = 8.0 m, 16 pulse
L = 8.0 m, 16 pulse
0.5
No signal condition, I
OH
=
−10 μA
4.75
200
100
200
15
4.80
600
700
600
25
L = 0.2 m, 16 pulse, T
a
= 65°C
± 3°C
36.7
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Symbol
Rating
Unit
Supply current
Maximum reception distance
*1
Low level output voltage
*2
High level output voltage
Low level pulse width
*1
L
max
V
OL
V
OH
Unit
V
mA
m
V
V
μs
μs
μs
kHz
kW
Load resistance
Ma
int
en
an
Center frequency
ce
High level pulse width
*1
/D
isc
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1:Burst wave form
figure
1.
.
*2:Constant wave form Figure 2.
Carrier frequency: f
O
on
tin
T
WL1
T
WL2
T
WH
f
O
R
L
Pl
ue
di
Carrier frequency: f
O
400
µs
400
µs
20 ms
Figure 1
Figure 2
Publication date: October 2008
SHE00064AEK
1

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