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PNA4211F

Description
Bipolar Integrated Circuit with Photodetection Function
CategoryLED optoelectronic/LED    photoelectric   
File Size29KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PNA4211F Overview

Bipolar Integrated Circuit with Photodetection Function

PNA4211F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPanasonic
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
ConfigurationCOMPLEX
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of functions1
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLINEAR OUTPUT PHOTO IC
shapeROUND
size3.2 mm
Maximum slew rate0.004 mA
Nominal supply voltage6 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Photo IC
PNA4211F
Bipolar Integrated Circuit with Photodetection Function
Unit : mm
5.3 max.
2-1.6±0.1
2-0.8±0.1
1.8±0.3
1.0±0.2
0.6±0.2
0.75±0.1
1.0 1.0
Features
Built-in amplifier circuit
9.4±0.3
4.3 max.
10 9 8 7 6
ø3.2 Dep. 0.1
10˚
Supports CD and 4-speed CD-ROM
1.0
1
10-0.4
+0.1
–0.15
2 34
5
10-0.35±0.1
0.2
+0.1
–0.05
x
5.0±0.1
10˚
10˚
4.0
±0.1
x : 0.0±0.2
y : 0.6±0.2
θ
: 45±2˚
Unit :
µm
10˚
0.2
Block Diagram
+
1
D
+
2
A
3
4
+
5
+
B
C
E
F
+
10
Dimensions of detection area
0.3±0.2mm
from package center
9
20
E
5
C
8
20
D
B
F
13
0
A
x
7
+
6
13
0
10
5
Pin Description
Pin No.
1
2
3
4
5
Function
D Out
A Out
COMMON GND
B Out
C Out
Pin No.
6
7
8
9
10
Function
E Out
COMMON GND
V
C
V
CC
F Out
y
θ
5
45˚
x
1

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