Darlington Phototransistors
PNA2803M
Darlington Phototransistor
Unit : mm
Not soldered 2.0 max.
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
ø 3 plastic package
ø3.8±0.2
ø3.0±0.2
15.0±1.0
4.5±0.3
5.0±0.2
0.6
2-0.8 max.
2-0.5±0.1
2
0.5±0.1
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
(1.5)
1.7
1.0
1
2.54
1: Emitter
2: Collector
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
*2
Symbol
I
CEO
I
CE(L)*3
λ
P
θ
t
r
, t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100Ω
I
CE(L)
= 1mA, L = 100 lx
*1
min
0.05
typ
max
0.5
1.5
Unit
µA
mA
nm
deg.
µs
850
30
150
0.7
1.5
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
*3
I
CE(L)
Classifications
Class
Q
0.05 to 0.25
R
0.18 to 0.8
S
0.7 to 1.5
I
CE(L)
(mA)
,,
50Ω
R
L
1
PNA2083M
Darlington Phototransistors
P
C
— Ta
120
24
I
CE(L)
— V
CE
10
3
I
CE(L)
— L
I
CE(L)
(mA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
100
I
CE(L)
(mA)
Ta = 25˚C
T = 2856K
20
10
2
Collector power dissipation
80
16
P
C
= 100mW
L = 20 lx
12
10 lx
8
5 lx
4
2 lx
1 lx
0
4
8
12
16
20
24
Collector photo current
Collector photo current
60
10
40
1
20
0
– 20
0
20
40
60
80
100
0
10
-1
10
-1
1
10
10
2
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CE(L)
— Ta
10
V
CE
= 10V
10
2
I
CEO
— Ta
V
CE
= 10V
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(mA)
Dark current I
CEO
(µA)
10
S (%)
Relative sensitivity
0
20
40
60
80
100
80
Collector photo current
60
1
1
40
10
–1
20
10
–1
– 40
0
40
80
120
10
–2
– 20
0
600
700
800
900
1000 1100 1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
100
10˚
20˚
Sig.IN
t
r
— I
CE(L)
V
CC
Sig.
OUT
R
L
90%
10%
Sig.IN
Sig.
OUT
50Ω
t
f
— I
CE(L)
V
CC
Sig.
OUT
R
L
90%
10%
Relative sensitivity S (%)
90
80
70
60
50
40
30
20
,,
,
30˚
Rise time t
r
(µs)
40˚
50˚
60˚
70˚
80˚
90˚
10
3
R
L
= 1kΩ
500Ω
Fall time t
f
(µs)
,
10
3
10
2
10
10
–2
10
–1
Sig.
OUT
50Ω
t
r
t
d
t
f
t
r
t
d
t
f
R
L
= 1kΩ
500Ω
100Ω
V
CC
= 10V
Ta = 25˚C
1
10
100Ω
10
2
10
10
–2
V
CC
= 10V
Ta = 25˚C
10
–1
1
10
Collector photo current
I
CE(L)
(mA)
Collector photo current
I
CE(L)
(mA)
2
Embedded System
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