PN5910 datasheet, PDF - EEWORLD Datasheet

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PN5910: Description500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size628KB，4 Pages; ManufacturerCentral Semiconductor

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500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

PN5910 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-92
package instruction	TO-92, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	3 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	0.625 W
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	700 MHz
Maximum off time (toff)	20 ns
Maximum opening time (tons)	15 ns
VCEsat-Max	0.5 V

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PN4250A

w w w. c e n t r a l s e m i . c o m

SILICON

PNP TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PN4250A is a

silicon PNP transistor designed for low level, low noise

amplifier applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCES

BVCEO

BVEBO

VCE(SAT)

hFE

Cob

hfe

hie

hoe

hre

SYMBOL

VCBO

VCES

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

5.0

500

625

-65 to +150

83.3

200

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=50V

VEB=3.0V

IC=10μA

IC=5.0mA

IE=10μA

IC=10mA, IB=0.5mA

VCE=5.0V, IC=100μA

VCB=5.0V, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=250μA, RS=1.0kΩ

f=1.0kHz, BW=150Hz

VCE=5.0V, IC=20μA, RS=10kΩ

f=1.0kHz, BW=150Hz

250

6.0

5.0

MAX

UNITS

0.25

250

700

6.0

800

2.0

kΩ

μS

x10

-4

R0 (26-July 2013)

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