PN3645 datasheet, PDF - EEWORLD Datasheet

PN3645: DescriptionPNP SILICON PLANAR EPITAXIAL TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size145KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Parameter Name	Attribute value
Maker	Micro Electronics
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	140 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

	PN3645	PN3644
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTORS	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Maker	Micro Electronics	Micro Electronics
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	60 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	140 °C	140 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.6 W	0.6 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz

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