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2SC5930

Description
silicon npn triple diffused type (pct process) high-speed and high-voltage switching applications
CategoryDiscrete semiconductor    The transistor   
File Size137KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC5930 Overview

silicon npn triple diffused type (pct process) high-speed and high-voltage switching applications

2SC5930 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage285 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)3300 ns
Base Number Matches1
2SC5930
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SC5930
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High-speed switching: t
f
= 0.3
μs
(max) (I
C
= 0.3 A)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta
=
25°C
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
600
600
285
7
1.0
2.0
0.5
1.0
150
−55
to 150
Unit
V
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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